Abstract: A system and a method for removing gas field chemicals from a feed stream are provided. An exemplary method includes performing a forward osmosis on a feed stream including gas field chemicals to form a concentrated feed stream, and treating the concentrated feed stream in an electrochemical process to form treated water.

Abstract: A method for forming a semiconductor device includes placing a semiconductor substrate on a top surface of a pedestal provided within a process chamber. A patterned photoresist layer provided over the substrate is stripped within the process chamber while maintaining the substrate at a first temperature. The patterned photoresist layer overlies a patterned insulating layer. The first temperature of the semiconductor substrate provided within the chamber is raised to a second temperature to remove volatile species from the patterned insulating layer.

Abstract: The invention generally provides an apparatus that reduces backside sputtering of the substrate in a pre-clean chamber and other etch chambers. The invention also provides an apparatus that reduces flaking of material from the film formed on the surfaces of the process kit and extends the specified lifetime of a process kit. One aspect of the invention provides an apparatus for supporting a substrate, comprising a support pedestal contacting a central portion of the substrate and an insulator surrounding the support pedestal, the insulator having a beveled portion extending from a circumferential edge of the substrate.