Abstract: The invention relates to a portable device for estimating at least one parameter characteristic of a polymer material, characterized in that the device comprises at least one infrared source, each infrared source being capable of emitting towards the polymer material a spectral line, representing maximum emission energy, selected in one of the wavelengths 10 ?m, 9.5 ?m, 7.2 ?m, 6 ?m, 3.5 ?m, 2.7 ?m or in one of the wave numbers 1,000 cm?1, 1,050 cm?1, 1,350 cm?1, 1,700 cm?1, 2,900 cm?1, 3,700 cm?1, at least one infrared detector, capable of receiving infrared radiation, which is reflected by the polymer material in response to the spectral line, a unit for determining the parameter characteristic of the polymer material as a function of the energy present in said spectral line in the infrared radiation, having been reflected by the polymer material and having been received by the infrared detector.

Abstract: A multi-spectral photodetector is provided, comprising: a plurality of N photodetectors where N is an integer such that N?2, each photodetector comprising an anode and a cathode separated from one another by a region of interest, all produced in a semiconductor material; at least one electrical contact for all of the N anodes; and an electrical contact associated with each of the N cathodes; said photodetectors being stacked on top of one another such that the anodes and the cathodes and finally the regions of interest of two consecutive photodetectors in the stack are arranged face to face, this stack making it possible to define a face, termed the active face of the multi-spectral photodetector, common to all the photodetectors of the stack, defined by the face of the first region of interest of the first photodetector of the stack via which photons are intended to enter the stack.

Abstract: The invention relates to a portable device (1) for estimating at least one parameter characteristic of a polymer material, characterized in that the device comprises at least one infrared source (101), each infrared source (101) being capable of emitting towards the polymer material a spectral line, representing maximum emission energy, selected in one of the wavelengths 10 ?m, 9.5 ?m, 7.2 ?m, 6 ?m, 3.5 ?m, 2.7 ?m or in one of the wave numbers 1000 cm?1, 1050 cm?1, 1350 cm?1, 1700 cm?1, 2900 cm?1, 3700 cm?1, at least one infrared detector (102), capable of receiving infrared radiation (112), which is reflected by the polymer material (M) in response to the spectral line, a unit for determining the parameter characteristic of the polymer material (M) as a function of the energy present in said spectral line in the infrared radiation (112), having been reflected by the polymer material (M) and having been received by the infrared detector (102).

Abstract: A multi-spectral photodetector is provided, comprising: a plurality of N photodetectors where N is an integer such that N?2, each photodetector comprising an anode and a cathode separated from one another by a region of interest, all produced in a semiconductor material; at least one electrical contact for all of the N anodes; and an electrical contact associated with each of the N cathodes; said photodetectors being stacked on top of one another such that the anodes and the cathodes and finally the regions of interest of two consecutive photodetectors in the stack are arranged face to face, this stack making it possible to define a face, termed the active face of the multi-spectral photodetector, common to all the photodetectors of the stack, defined by the face of the first region of interest of the first photodetector of the stack via which photons are intended to enter the stack.

Abstract: A photodetector based on buried junctions includes a semiconductor structure with two successive p-n junctions, buried at increasing depths, assembled in pairs in opposition, and defining at least three layers. One of the layers is adjacent to a photosensitive portion of the surface of the photodetector. A reverse bias is applied to the junctions, and the values of at least two internal currents passing through such junctions is detected. The internal currents are generated by received light, with each of the junctions corresponding to a particular wavelength of the received light.