Abstract: A method of plasma assisted CO2 cleaning for dry removal of residual photoresist and sidewall polymer with an etch gas mixture comprising fluorine containing gas, oxygen and hydrogen in N2 or H2O. The process removes polymer residues present on a metal layer on a substrate and on the sidewalls of metal lines and inhibits chlorine-based corrosion while being very selective to exposed Ti, TiN, Al and SiO2. The invention is particularly suited for removing post metal etch polymer residue from top and sidewall of metal lines.

Abstract: A plasma assisted cryogenic cleaner for and a method of performing cleaning of a surface that must be substantially free of contaminants has a resiliently mounted nozzle for spraying a cryogenic cleaning medium on the surface. The cleaning is conducted by applying to the substrate surface a mixture of gases selected from the group consisting of oxygen, nitrogen, hydrogen, fluorine, hydrofluorocarbon or a mixture of such gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water and/or have a weakened bonds that they can be removed with a stream of cryogenic medium. The cryogenic and plasma processes can be performed sequentially or simultaneously.

Abstract: A method of plasma assisted CO2 cleaning for dry removal of residual photoresist and sidewall polymer with an etch gas mixture comprising fluorine containing gas, oxygen and hydrogen in N2 or H2O. The process removes polymer residues present on a metal layer on a substrate and on the sidewalls of metal lines and inhibits chlorine-based corrosion while being very selective to exposed Ti, TiN, Al and SiO2. The invention is particularly suited for removing post metal etch polymer residue from top and sidewall of metal lines.

Abstract: A plasma assisted cryogenic cleaner for and a method of performing cleaning of a surface that must be substantially free of contaminants has a resiliently mounted nozzle for spraying a cryogenic cleaning medium on the surface. The cleaning is conducted by applying to the substrate surface a mixture of gases selected from the group consisting of oxygen, nitrogen, hydrogen, fluorine, hydrofluorocarbon or a mixture of such gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water and/or have a weakened bonds that they can be removed with a stream of cryogenic medium. The cryogenic and plasma processes can be performed sequentially or simultaneously.

Abstract: A plasma assisted cryogenic cleaner for and a method of performing cleaning of a surface that must be substantially free of contaminants has a resiliently mounted nozzle for spraying a cryogenic cleaning medium on the surface. The cleaning is conducted by applying to the substrate surface a mixture of gases selected from the group consisting of oxygen, nitrogen, hydrogen, fluorine, hydrofluorocarbon or a mixture of such gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water and/or have a weakened bonds that they can be removed with a stream of cryogenic medium. The cryogenic and plasma processes can be performed sequentially or simultaneously.

Abstract: A plasma assisted cryogenic cleaner for and a method of performing cleaning of a surface that must be substantially free of contaminants has a resiliently mounted nozzle for spraying a cryogenic cleaning medium on the surface. The cleaning is conducted by applying to the substrate surface a mixture of gases selected from the group consisting of oxygen, nitrogen, hydrogen, fluorine, hydrofluorocarbon or a mixture of such gases to both remove the photoresist layer and alter the composition of the residues such that the residues are soluble in water and/or have a weakened bonds that they can be removed with a stream of cryogenic medium. The cryogenic and plasma processes can be performed sequentially or simultaneously.