Patents by Inventor Mohamed Kamel Mahmoud

Mohamed Kamel Mahmoud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MOS transistor with varying channel width
    Patent number: 9484435
    Abstract: One embodiment of the invention relates to a semiconductor device formed over a semiconductor body. In this device, source and drain regions are formed in the body about lateral edges of a gate electrode and are separated from one another by a gate length. A channel region, which is configured to allow charged carriers to selectively flow between the source and drain regions during operation of the device, has differing widths under the gate electrode. These widths are generally perpendicular to the gate length. Other devices, methods, and systems are also disclosed.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: November 1, 2016
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Henry Litzmann Edwards, Tathagata Chatterjee, Mohamed Kamel Mahmoud, Gabriel J. Gomez
  • Body bias to facilitate transistor matching
    Patent number: 7687856
    Abstract: One embodiment of the present invention relates to a method for transistor matching. In this method, a channel is formed within a first transistor by applying a gate-source bias having a first polarity to the first transistor. The magnitude of a potential barrier in a pocket implant region of the first transistor is reduced by applying a body-source bias having the first polarity to the first transistor. Current flow is facilitated across the channel by applying a drain-source bias having the first polarity to the first transistor. Other methods and circuits are also disclosed.
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: March 30, 2010
    Assignee: Texas Instruments Incorporated
    Inventors: Henry Litzmann Edwards, Tathagata Chatterjee, Mohamed Kamel Mahmoud, Xiaoju Wu
  • SEMICONDUCTOR DEVICE HAVING VARIOUS WIDTHS UNDER GATE
    Publication number: 20090159967
    Abstract: One embodiment of the invention relates to a semiconductor device formed over a semiconductor body. In this device, source and drain regions are formed in the body about lateral edges of a gate electrode and are separated from one another by a gate length. A channel region, which is configured to allow charged carriers to selectively flow between the source and drain regions during operation of the device, has differing widths under the gate electrode. These widths are generally perpendicular to the gate length. Other devices, methods, and systems are also disclosed.
    Type: Application
    Filed: December 19, 2007
    Publication date: June 25, 2009
    Inventors: Henry Litzmann Edwards, Tathagata Chatterjee, Mohamed Kamel Mahmoud, Gabriel J. Gomez
  • BODY BIAS TO FACILITATE TRANSISTOR MATCHING
    Publication number: 20080277731
    Abstract: One embodiment of the present invention relates to a method for transistor matching. In this method, a channel is formed within a first transistor by applying a gate-source bias having a first polarity to the first transistor. The magnitude of a potential barrier in a pocket implant region of the first transistor is reduced by applying a body-source bias having the first polarity to the first transistor. Current flow is facilitated across the channel by applying a drain-source bias having the first polarity to the first transistor. Other methods and circuits are also disclosed.
    Type: Application
    Filed: May 10, 2007
    Publication date: November 13, 2008
    Inventors: Henry Litzmann Edwards, Tathagata Chatterjee, Mohamed Kamel Mahmoud, Xiaoju Wu