Patents by Inventor Mohamed M. Elkholy

Mohamed M. Elkholy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11705861
    Abstract: A first three state driver injects a first clock signal into a crystal through an input node during a startup phase of a crystal oscillator and a second three state driver injects a second signal into the crystal through an output node during the startup phase. The first and second signals are anti-phase signals. The crystal oscillator circuit includes a first amplifier that is used during starting up and steady-state operation and includes a second amplifier. The injection through the input and output nodes is disabled after a fixed time. After injection ends, the second amplifier is turned on if voltage on the output node has reached a desired voltage and left off otherwise. If the second amplifier is turned on, the second amplifier is turned off when the voltage on the output node reaches the desired voltage.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: July 18, 2023
    Assignee: Silicon Laboratories Inc.
    Inventors: Mohamed M. Elkholy, Francesco Barale, Tiago Pinto Guia Marques, Steffen Skaug, Håkon Børli
  • Patent number: 11699974
    Abstract: A frequency synthesizer on an integrated circuit provides a local oscillator (LO) signal for RF operations and also functions as an injection clock signal source during crystal oscillator startup. The integrated circuit goes into a sleep mode in which the crystal oscillator is off and responsive to a wakeup event the crystal oscillator starts up again using the injection clock signal sourced from the frequency synthesizer. Parameters that cause the injection clock signal to match the crystal oscillator frequency are stored. The frequency synthesizer includes a phase-locked loop having an LC oscillator. A digital to analog converter controls the LC oscillator during injection. During an initial power up of the integrated circuit, a PLL in the frequency synthesizer locks to the crystal oscillator frequency to determine the parameters to store for injection.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: July 11, 2023
    Assignee: Silicon Laboratories Inc.
    Inventors: Mohamed M. Elkholy, Mustafa Koroglu, Wenhuan Yu
  • Patent number: 11552666
    Abstract: A wireless transceiver circuit with an impedance matching network within an integrated circuit is disclosed. In some embodiments, the impedance matching network utilizes an inductor, having two portions, disposed on two different metal layers of the integrated circuit. The first end of the first portion of the inductor is in communication with an antenna. The second end of the second portion is in communication with a low noise amplifier for receiving signals and a power amplifier for transmitting RF signals. The second end of the first portion is connected to the first end of the second portion using a via. In another embodiment, the two portions are disposed on the same metal layer, wherein one portion is disposed within the other with a gap separating the two portions. These configurations require less space than using two separate inductors and also have a low coupling coefficient.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: January 10, 2023
    Assignee: Silicon Laboratories Inc.
    Inventors: Mohamed M. Elkholy, Francesco Barale, Mustafa H. Koroglu
  • Publication number: 20220416829
    Abstract: A wireless transceiver circuit with an impedance matching network within an integrated circuit is disclosed. In some embodiments, the impedance matching network utilizes an inductor, having two portions, disposed on two different metal layers of the integrated circuit. The first end of the first portion of the inductor is in communication with an antenna. The second end of the second portion is in communication with a low noise amplifier for receiving signals and a power amplifier for transmitting RF signals. The second end of the first portion is connected to the first end of the second portion using a via. In another embodiment, the two portions are disposed on the same metal layer, wherein one portion is disposed within the other with a gap separating the two portions. These configurations require less space than using two separate inductors and also have a low coupling coefficient.
    Type: Application
    Filed: June 29, 2021
    Publication date: December 29, 2022
    Inventors: Mohamed M. Elkholy, Francesco Barale, Mustafa H. Koroglu
  • Patent number: 10951190
    Abstract: Systems and methods are disclosed for on-chip harmonic filtering for radio frequency (RF) communications. A filtering and matching circuit for an integrated circuit includes a first capacitance coupled in parallel with a first inductance, a second inductance coupled to the first inductance, and a variable second capacitance coupled between the first and second inductance. The variable second capacitance is controlled to provide filtering with respect to the RF signal as well as impedance matching with respect to a load coupled to the connection pad. For one embodiment, the variable second capacitance includes a coarse-tune variable capacitor circuit and a fine-tune variable capacitor circuit. The coarse-tuning controls impedance matching, and the fine tuning controls a notch for the filtering. The load can be an antenna for the RF communications. The integrated circuit can include a receive path, a transmit path, or both.
    Type: Grant
    Filed: April 13, 2020
    Date of Patent: March 16, 2021
    Assignee: Silicon Laboratories Inc.
    Inventors: Essam S. Atalla, Ruifeng Sun, Mohamed M. Elkholy
  • Publication number: 20210013857
    Abstract: Systems and methods are disclosed for on-chip harmonic filtering for radio frequency (RF) communications. A filtering and matching circuit for an integrated circuit includes a first capacitance coupled in parallel with a first inductance, a second inductance coupled to the first inductance, and a variable second capacitance coupled between the first and second inductance. The variable second capacitance is controlled to provide filtering with respect to the RF signal as well as impedance matching with respect to a load coupled to the connection pad. For one embodiment, the variable second capacitance includes a coarse-tune variable capacitor circuit and a fine-tune variable capacitor circuit. The coarse-tuning controls impedance matching, and the fine tuning controls a notch for the filtering. The load can be an antenna for the RF communications. The integrated circuit can include a receive path, a transmit path, or both.
    Type: Application
    Filed: April 13, 2020
    Publication date: January 14, 2021
    Inventors: Essam S. Atalla, Ruifeng Sun, Mohamed M. Elkholy
  • Patent number: 10658999
    Abstract: Systems and methods are disclosed for on-chip harmonic filtering for radio frequency (RF) communications. A filtering and matching circuit for an integrated circuit includes a first capacitance coupled in parallel with a first inductance, a second inductance coupled to the first inductance, and a variable second capacitance coupled between the first and second inductance. The variable second capacitance is controlled to provide filtering with respect to the RF signal as well as impedance matching with respect to a load coupled to the connection pad. For one embodiment, the variable second capacitance includes a coarse-tune variable capacitor circuit and a fine-tune variable capacitor circuit. The coarse-tuning controls impedance matching, and the fine tuning controls a notch for the filtering. The load can be an antenna for the RF communications. The integrated circuit can include a receive path, a transmit path, or both.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: May 19, 2020
    Assignee: Silicon Laboratories Inc.
    Inventors: Essam S. Atalla, Ruifeng Sun, Mohamed M. Elkholy
  • Publication number: 20180348805
    Abstract: Embodiments of bias current generator circuits are provided herein for generating stable bias currents. In one embodiment, a bias current generator circuit may include a voltage-to-current generating circuit, an integrate and hold circuit, an amplifier circuit and a plurality of output branches. The voltage-to-current generating circuit may supply a first current to a first node of the bias current generator circuit. The integrate and hold circuit may receive a second current, which is equal to a difference between the first current and a reference current, from the first node and may generate a first voltage in response thereto. The amplifier circuit may receive the first voltage generated by the integrate and hold circuit, and may generate a second voltage in response to the first voltage. The plurality of output branches may receive the second voltage, and may generate a plurality of bias currents in response thereto.
    Type: Application
    Filed: May 31, 2017
    Publication date: December 6, 2018
    Inventors: Mohamed M. Elsayed, Mohamed M. Elkholy