Abstract: Disclosed herein are microelectronic assemblies and related devices and methods. In some embodiments, a microelectronic assembly may include a glass layer having a surface, the glass layer including conductive through-glass vias (TGVs); and a substrate layer on the surface of the glass layer, the substrate layer including a dielectric material, wherein the dielectric material includes an epoxy having thermal isomeric linkages, non-thermal isomeric linkages, and non-thermal isomeric epoxy monomers, and the thermal isomeric linkages including a cis-dibenzocyclooctane (DBCO) moiety or a tetra derivative DBCO moiety. In some embodiments, the dielectric material includes an epoxy having thermal isomeric epoxy monomers including a cis-DBCO moiety or a tetra derivative DBCO moiety, non-thermal isomeric epoxy monomers, and non-thermal isomeric linkages.

Abstract: Various techniques for edge stress reduction in glass cores and related devices and methods are disclosed. In one example, a microelectronic assembly includes a glass core having a bottom surface, a top surface opposite the bottom surface, and one or more sidewalls extending between the bottom surface and the top surface, and further includes a panel of an organic material, wherein the glass core is embedded within the panel. In another example, a microelectronic assembly includes a glass core as in the first example, where an angle between a portion of an individual sidewall and one of the bottom surface or the top surface is greater than 90 degrees. In yet another example, a microelectronic assembly includes a glass core as in the first example, and further includes a pattern of a material on one of the one or more sidewalls.

Abstract: Microelectronic assemblies with glass cores that have undergone localized thermal healing and/or localized doping in regions adjacent to glass surface are disclosed. In one example, a microelectronic assembly includes a glass core having a first face, an opposing second face, a sidewall extending between the first face and the second face, a surface region, and a bulk region, where the surface region is a portion of the glass core that starts at a surface of the first face, the second face, or the sidewall and extends from the surface into the glass core by a total depth of up to about 50 micron, the bulk region is a portion of the glass core further away from the surface than the surface region, and a density of the surface region is higher than a density of the bulk region, e.g., at least about 5% higher or at least about 7.5% higher.

Abstract: Embodiments disclosed herein include an apparatus with a glass core and a via. In an embodiment, the apparatus comprises a layer, where the layer is a solid layer of glass. An opening is provided through the layer, and a via is in the opening. The via comprises a first material, where the first material comprises at least one metallic element, and a second material, where the second material comprises carbon.