Abstract: A method for producing semiconductor devices including reinforcing metal tiles and the resulting semiconductor package are provided. Embodiments include forming one or more reinforcing metal tiles at corners of an upper portion of a metal stack of semiconductor die during manufacturing of the semiconductor die; and attaching the semiconductor die to a packaging substrate.

Abstract: Methods for creating effective noise reducing structures in an IC device to significantly reduce TSV-induced noise in an IC substrate of the IC device and the resulting device are disclosed. Embodiments include providing a plurality of circuits on an upper surface of an IC substrate; providing an active TSV in proximity to the circuits, wherein the TSV extends through the IC substrate; forming a noise reducing structure connected to a perimeter of a vertical segment of the active TSV; and connecting the noise reducing structure to an electrical ground node in common with the circuits.