Abstract: A synthesized grating is provided comprising a substrate/layer, and a plurality of alternating aperiodic non-uniform low and high index profiles on a surface of the substrate/layer defining a transmission/reflection spectrum for one of either single or multi-frequency operation of said grating in an optical cavity. A method is also provided for designing the synthesized grating, comprising determining a grating structure of given profiles through analysis of an optimized weighted sum and mapping the grating profile to said surface with the plurality of alternating non-uniform low and high index profiles.

Abstract: An accelerator circuit is provided that includes an inverter chain having an input coupled to a data line and a sense circuit having inputs coupled to an output of the inverter chain and the data line. The sense circuit is configured to sense a rise toward a supply voltage on the data line or a fall toward a ground voltage on the data line. The accelerator circuit further includes an amplify circuit having inputs coupled to outputs of the sense circuit and an output coupled to the data line, where the amplify circuit is configured to amplify the data line toward the supply voltage or toward the ground voltage based on amplify enable signals output by the sense circuit.

Abstract: A laser comprising a narrow linewidth, comprising: a grating along a laser cavity; a laser waveguide having a plurality of waveguide sections corresponding to a plurality of grating sections, each of the plurality of waveguide sections having a ridge/mesa width for detuning the grating in each of the plurality of grating sections; and a plurality of contact electrodes contacting each of the plurality of waveguide sections, the plurality of contact electrodes for applying a different current to each of the plurality of waveguide sections to enable active feedback noise suppression.

Abstract: An accelerator circuit is provided that includes an inverter chain having an input coupled to a data line and a sense circuit having inputs coupled to an output of the inverter chain and the data line. The sense circuit is configured to sense a rise toward a supply voltage on the data line or a fall toward a ground voltage on the data line. The accelerator circuit further includes an amplify circuit having inputs coupled to outputs of the sense circuit and an output coupled to the data line, where the amplify circuit is configured to amplify the data line toward the supply voltage or toward the ground voltage based on amplify enable signals output by the sense circuit.

Abstract: A synthesized grating is provided comprising a substrate/layer, and a plurality of alternating aperiodic non-uniform low and high index profiles on a surface of the substrate/layer defining a transmission/reflection spectrum for one of either single or multi-frequency operation of said grating in an optical cavity. A method is also provided for designing the synthesized grating, comprising determining a grating structure of given profiles through analysis of an optimized weighted sum and mapping the grating profile to said surface with the plurality of alternating non-uniform low and high index profiles.

Abstract: Unlike most MEMS device configurations which simply switch between two positions in many optical devices the state of a MEMS mirror is important in all transition positions. It may determine the characteristics of an optical delay line system and by that an optical coherence tomography system in one application and in another the number of wavelength channels and the dynamic wavelength switching capabilities in the other. The role of the MEMS is essential and it is responsible for altering the paths of the different wavelengths in either device. It would be beneficial to improve the performance of such MEMS and thereby the performance of the optical components and optical systems they form part of. The inventors have established improvements to the design and implementation of such MEMS mirrors as well as optical waveguide technologies to in-plane optical processing as well as the mid infrared for optical spectroscopy.

Abstract: Unlike most MEMS device configurations which simply switch between two positions in many optical devices the state of a MEMS mirror is important in all transition positions. It may determine the characteristics of an optical delay line system and by that an optical coherence tomography system in one application and in another the number of wavelength channels and the dynamic wavelength switching capabilities in the other. The role of the MEMS is essential and it is responsible for altering the paths of the different wavelengths in either device. It would be beneficial to improve the performance of such MEMS and thereby the performance of the optical components and optical systems they form part of. The inventors have established improvements to the design and implementation of such MEMS mirrors as well as optical waveguide technologies to in-plane optical processing as well as the mid infrared for optical spectroscopy.

Abstract: A memory cell array includes local input/output logic configured to access memory cells in memory banks. The memory cell array includes inner memory banks disposed in either direction from the local input/output logic. The memory cell array includes outer memory banks disposed beyond the inner memory banks in either direction from the local input/output logic. The memory cell array further includes local bitlines that run in a lower metallization layer of each of the memory banks. The local bitlines of the outer memory banks connect to the local input/output logic via an upper metallization layer across regions of the inner memory banks.

Abstract: A memory cell array includes local input/output logic configured to access memory cells in memory banks. The memory cell array includes inner memory banks disposed in either direction from the local input/output logic. The memory cell array includes outer memory banks disposed beyond the inner memory banks in either direction from the local input/output logic. The memory cell array further includes local bitlines that run in a lower metallization layer of each of the memory banks. The local bitlines of the outer memory banks connect to the local input/output logic via an upper metallization layer across regions of the inner memory banks.

Abstract: Static random access memory (SRAM) cells are disclosed. In one example embodiment the SRAM cell includes a latch having a first node and a second node for storing bit information at the first node and a complement of the bit at the second node. The SRAM cell further includes a first switch controlled by a write operation signal, connected between a supply voltage and a first pull-up transistor of the latch and a third switch controlled the write operation signal, connected between the second node and a ground voltage. The SRAM cell further includes a second switch controlled by the write operation signal, connected between the supply voltage and a second pull-up transistor and a fourth switch controlled by the write operation signal, connected between the second node and the ground voltage. The write operation signals are generated by a first complex gate and a second complex gate.

Abstract: A VECSEL-type surface-emitting semiconductor laser device is manufactured by providing a first component part (10) comprising a layered first mirror (12), providing a second component part (20) comprising a layered active region (22), permanently joining the second component part to the first component part to form an integral unit, and arranging a second mirror (32) so as to form an optical cavity containing the active region. This method of manufacture enables production at lower cost and enables greater flexibility in the choice of materials for the mirrors and the active region well as for the substrates on which the first mirror and the active region are deposited, as compared to traditional monolithic epitaxy methods. Preferably, the laser device is a IV-VI-type VECSEL emitting in the mid-IR range of the electromagnetic spectrum.