Patents by Inventor Mohamed Ramy Abdel-Rahman

Mohamed Ramy Abdel-Rahman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10648865
    Abstract: The thermal sensing layer for a microbolometer includes a Ge1-xSnx film layer, where 0.17?x?0.25. The Ge1-xSnx film layer may be deposited on a substrate layer, such as pure silicon. An additional layer of silicon dioxide may be added, such that the silicon dioxide layer is sandwiched between the silicon substrate and the Ge1-xSnx film. In order to make the Ge1-xSnx thin film layer, germanium (Ge) and tin (Sn) are simultaneously sputter deposited on the substrate, where the atomic ratio of germanium to tin is between 0.83:0.17 and 0.75:0.25 inclusive. The sputter deposition may occur in an argon atmosphere, with the germanium having a deposition rate of 9.776 nm/min, and with the tin having a deposition rate between 2.885 nm/min and 4.579 nm/min.
    Type: Grant
    Filed: August 30, 2019
    Date of Patent: May 12, 2020
    Assignee: King Saud University
    Inventors: Mohamed Ramy Abdel-Rahman, Mohammad Abdulaziz Alduraibi, Bouraoui Ilahi
  • Patent number: 10481006
    Abstract: The thermal sensing layer for a microbolometer includes a Ge1-xSnx film layer, where 0.17?x?0.25. The Ge1-xSnx film layer may be deposited on a substrate layer, such as pure silicon. An additional layer of silicon dioxide may be added, such that the silicon dioxide layer is sandwiched between the silicon substrate and the Ge1-xSnx film, In order to make the Ge1-xSnx thin film layer, germanium (Ge) and tin (Sn) are simultaneously sputter deposited on the substrate, where the atomic ratio of germanium to tin is between 0.83:0.17 and 0.75:0.25 inclusive. The sputter deposition may occur in an argon atmosphere, with the germanium having a deposition rate of 9.776 nm/min, and with the tin having a deposition rate between 2.885 nm/min and 4.579 nm/min.
    Type: Grant
    Filed: January 30, 2019
    Date of Patent: November 19, 2019
    Assignee: King Saud University
    Inventors: Mohamed Ramy Abdel-Rahman, Mohammad Abdulaziz Alduraibi, Bouraoui Ilahi
  • Patent number: 9128230
    Abstract: The optical absorber for long-wave infrared radiation includes a nano-plasmonic gold structure arrayed on an absorbing dielectric substrate in an alternating checkerboard-type pattern. A plurality of plasmonic cells are formed on an upper surface of the absorbing dielectric substrate, which can be, for example, a silicon nitride (Si3N4) substrate. The plurality of plasmonic cells are arrayed in a regular rectangular grid pattern, with each plasmonic cell having a plurality of elongated strips, each extending along an identical axis of orientation within the plasmonic cell. Adjacent ones of the plasmonic cells are oriented orthogonally with respect to one another, and each elongated strip includes a titanium layer formed on the upper surface of the absorbing dielectric substrate and a gold layer formed on the titanium layer, such that the titanium layer is sandwiched between the gold layer and the upper surface of the absorbing dielectric substrate.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: September 8, 2015
    Assignee: KING SAUD UNIVERSITY
    Inventors: Ehab Salaheldin Awad Mohamed, Mohamed Ramy Abdel-Rahman