Abstract: A computing system may include a metal stack tuning engine and a tuned metal stack application engine. The metal stack tuning engine may be configured to access an obscured metal stack definition specified for an integrated circuit (IC) manufacture process and tune selected metal stack parameters of the obscured metal stack definition to obtain a tuned metal stack definition. The metal stack tuning engine may do so by generating sampled metal stack definitions, constructing sampled layout geometries from the sampled metal stack definitions, computing parasitic capacitance value sets for the sampled layout geometries, and determining tuned values for the selected metal stack parameters through a curve fitting process. The tuned metal stack application engine may be configured to use the tuned metal stack definition to perform a parasitic capacitance extraction process for an input IC design.

Abstract: A computing system may include a metal stack tuning engine and a tuned metal stack application engine. The metal stack tuning engine may be configured to access an obscured metal stack definition specified for an integrated circuit (IC) manufacture process and tune selected metal stack parameters of the obscured metal stack definition to obtain a tuned metal stack definition. The metal stack tuning engine may do so by generating sampled metal stack definitions, constructing sampled layout geometries from the sampled metal stack definitions, computing parasitic capacitance value sets for the sampled layout geometries, and determining tuned values for the selected metal stack parameters through a curve fitting process. The tuned metal stack application engine may be configured to use the tuned metal stack definition to perform a parasitic capacitance extraction process for an input IC design.

Abstract: Aspects of the disclosed techniques relate to techniques for modeling substrate noise coupling. Electrical impedance between two contacts in the presence of one or more other contacts is modeled based on a horizontal impedance model and an L-shaped impedance model. The one or more other contacts may be clustered together in four regions first and then are represented by the horizontal impedance model and/or the L-shaped impedance model. The electrical impedance is inserted into netlist for circuit simulation.