Abstract: Monitoring first and second multiphase electrical machines driven by first and second power electronics modules from first and second DC electrical supplies includes: measuring DC link currents from the DC electrical supplies to the power electronics modules; measuring stator currents through phases of the electrical machines; calculating a first ratio from harmonic component of the first DC link current over harmonic component of the second DC link current, a second ratio from harmonic component of a positive sequence stator current through the first electrical machine over harmonic component of a positive sequence stator current through the second electrical machine, a third ratio from DC component of a combined sequence stator current through the first electrical machine over DC component of a combined sequence stator current through the second electrical machine; determining a winding fault in the electrical machine if one or more of the ratios is outside a predetermined range.

Abstract: A power electronics converter connectable, on a DC-side, to a DC electrical network and either, on an AC-side, to an electrical machine coupled to a drive shaft of an engine or propulsor, or, on a second DC-side, to a battery pack. The power electronics converter includes: a power conversion unit including a plurality of semiconductor switching elements and a DC-link; and a gate driver unit, configured to control the semiconductor switching elements so that the power conversion unit: inverts DC power received from the DC electrical network to AC power and provides the AC power to the electrical machine, rectifies AC power received from the electrical machine to DC power and provides the DC power to the DC electrical network, or performs DC-DC conversion between the DC-electrical network and the battery pack; wherein the gate driver unit includes an equipment health monitoring component.

Abstract: A solid state power controller includes at least one semiconductor switch with a control terminal, a controller for generating a pulsed signal, and a gate driver circuit for receiving the pulsed signal and generating a pulsed driver signal. The gate driver circuit includes a gate driver for receiving the pulsed signal and providing a pulsed output signal, and driver signal generating device operable in a first state and a second state. The driver signal generating device receives the gate driver pulsed output signal and generates in the first state a first pulsed driver signal that operates a semiconductor switch in an active region and generates in the second state a second pulsed driver signal that operates the semiconductor switch in a saturated region. The controller is configured to set the driver signal generating device in the first or second state depending on a voltage level signal received by the controller.

Abstract: A power protection system includes a first DC power source, a first load, a first power bus connecting the first power source and the first load, and a first solid state circuit breaker circuit integrated in the first power bus. The first solid state circuit breaker circuit includes a first semiconductor switch, a first capacitor arranged between the high side voltage rail and the low side voltage rail closer to the power source or to the load than the semiconductor switch, and a first inductor located such that current generated by the first capacitor when unloading in case of a short circuit at the power source or at the load passes the first inductor. The controller is configured to measure a voltage change over the first inductor and trigger an actuation signal for the first semiconductor switch if a voltage change surpasses a predetermined threshold voltage.

Abstract: A method of monitoring health of a power semiconductor device includes: determining a steady state loading of the power semiconductor device; when it is determined that the power semiconductor device is under a steady state loading, monitoring a case temperature parameter relating to a temperature of the case of the power semiconductor device over a predetermined period, derive a normalised parameter from the monitored case temperature parameter and determine the health of the power semiconductor device based on the normalised parameter.

Abstract: A method of monitoring a health state of a power semiconductor device includes: receiving an initial transient voltage parameter relating to transient voltage of the power semiconductor device when turning on, when it is known to be unaged; receiving an initial transient current parameter relating to transient current of the power semiconductor device when turning on, when it is known to be unaged; determining an initial energy parameter, relating to initial turn-on switching energy or power of the power semiconductor device, when it is known to be unaged; receiving an operating transient voltage parameter relating to the transient voltage of the power semiconductor device in operation; receiving an operating transient current parameter relating to the transient current of the power semiconductor device in operation; determining an operating energy parameter; and determining the health state of the power semiconductor device based on the initial energy parameter and the operating energy parameter.

Abstract: The disclosure relates to thermal management of a power electronics converter. An example embodiment includes a power electronics converter comprising: a first set of terminals connectable to a first voltage supply; a second set of terminals connectable to a second voltage supply; a plurality of semiconductor switches connected between the first and second sets of terminals; a voltage sensor connected to measure a voltage across the second supply; a current sensor connected to measure a current through the second supply; and a controller connected to provide switching signals to the semiconductor switches and to receive voltage and current signals from the voltage and current sensors, the controller configured, for each of the semiconductor switches, to: determine a junction temperature of the semiconductor switch; compare the determined junction temperature to a reference temperature; and adjust a switching gate voltage applied to the semiconductor switch.

Abstract: Monitoring circuitry connectable to power conversion circuitry enclosed within packaging, the power conversion circuitry including terminals providing external connections to nodes of the power conversion circuitry enclosed within the packaging, the monitoring circuitry including: a comparator including a first input terminals connectable to first and second terminals of the power conversion circuitry and a second input terminal connected to a reference voltage, wherein the first and second terminals provide external connections to first and second nodes connected along respective current paths each connected to switching circuitry of the power conversion circuitry enclosed within the packaging, wherein the comparator detects a switch state of the switching circuitry based on a voltage generated at the first input terminal and the reference voltage; processing circuitry connected to the comparator and configured to monitor the power conversion circuitry based on the detected switch state and a signal of the p

Abstract: An operating condition monitor (100) for monitoring an operating condition of a transistor-based power converter (102), comprising: a sensing apparatus (106) configured to measure a turn-off transient energy of the power converter (102), a processor (108) in communication with the sensing apparatus (106) to receive the measurement of the turn-off transient energy, the processor being configured to: compare the measurement of the turn-off transient energy to a threshold; and issue an event signal based on the comparison to the threshold meeting a comparison criterion. A method (200, 200?) of monitoring an operating state of a transistor-based power converter is also disclosed.