Patents by Inventor Mohamed Serry

Mohamed Serry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Shape Memory Alloy Capsule Micropump for Drug Delivery Applications
    Publication number: 20240133368
    Abstract: An SMA actuated capsule micropump is provided having a linear actuation which leads to large deflection, high discharge volume, and high static head pressure. The pump is designed for drug delivery applications by introducing a replaceable capsule reservoir and controlling the drug's delivery at a constant dose and a constant static head pressure. The device has a wide range of flow rates (from less than 2 to more than 2500 ?L/min) that would be suitable for a broad range of drug delivery applications. Also, the pump has a wide range of pressures up to 14 kPa (105 mmHg) that are possible, which well exceeds the back pressure of most of the superficial veins typically utilized for intravenous drug delivery, without compromising the suitability for transdermal drug delivery.
    Type: Application
    Filed: March 29, 2022
    Publication date: April 25, 2024
    Inventors: Youssef Mohamed Kotb, Islam Adel Elgamal, Mohamed Yousef Serry
  • NOVEL NANOSTRUCTURED MEMBRANE SEPARATORS AND USES THEREOF
    Publication number: 20160129403
    Abstract: Ultrahigh sensitive methods useful for separation, preconcentration, and detection of heavy metal ions in aqueous media are provided. Also provided are novel nanostructure separators useful for separation, preconcentration, and detection of heavy metal ions in aqueous media.
    Type: Application
    Filed: May 29, 2014
    Publication date: May 12, 2016
    Inventors: Mohamed Serry, Abdel Hameed Sharaf, Mohamed Shaban, Asmaa Gamal
  • Silicon germanium mask for deep silicon etching
    Patent number: 8791021
    Abstract: Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF6/O2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from ?80 degrees Celsius to ?140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: July 29, 2014
    Assignee: King Abdullah University of Science and Technology
    Inventors: Mohamed Serry, Andrew Rubin, Mohamed Refaat, Sherif Sedky, Mohammad Abdo
  • SILICON GERMANIUM MASK FOR DEEP SILICON ETCHING
    Publication number: 20120225557
    Abstract: Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF6/O2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from ?80 degrees Celsius to ?140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.
    Type: Application
    Filed: March 1, 2012
    Publication date: September 6, 2012
    Applicants: THE AMERICAN UNIVERSITY IN CAIRO, KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mohamed Serry, Andrew Rubin, Mohamed Refaat, Sherif Sedky, Mohammad Abdo