Abstract: A method of fabricating a thermal management device. The method includes depositing a seed layer, using a seed layer depositing technique, on a side of a support base; growing a heat sink base layer on a side of the seed layer; depositing a hard mask on a side of the support base directly opposite that containing the seed and heat sink base layers; patterning the hard mask with a photoresist mask; etching the patterned hard mask with an etching technique, wherein the etching creates trenches in the underlying support base, exposing the seed layer; removing the hard mask with a hard mask removal technique; depositing a layer of photoresist on the heat sink base layer; growing heat sinks using a heat sink growth technique on the exposed seed layer; removing the photoresist layer with a photoresist layer removal technique; and removing the support base with a support base removal technique.

Abstract: A lockable semiconductor die includes a first die portion having electrical contacts and a second die portion having electrical contacts electrically coupled to the electrical contacts of the first die portion. The second die portion has a first geometry configured to lock into a corresponding second die portion of another lockable semiconductor die having a second geometry that is inverse to the first geometry. The first and second die portions of the lockable semiconductor die are monolithic.

Abstract: Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

Abstract: Deep reactive ion etching is essential for creating high aspect ratio micro-structures for microelectromechanical systems, sensors and actuators, and emerging flexible electronics. A novel hybrid dual soft/hard mask bilayer may be deposited during semiconductor manufacturing for deep reactive etches. Such a manufacturing process may include depositing a first mask material on a substrate; depositing a second mask material on the first mask material; depositing a third mask material on the second mask material; patterning the third mask material with a pattern corresponding to one or more trenches for transfer to the substrate; transferring the pattern from the third mask material to the second mask material; transferring the pattern from the second mask material to the first mask material; and/or transferring the pattern from the first mask material to the substrate.

Abstract: A method of fabricating a thermal management device. The method includes depositing a seed layer, using a seed layer depositing technique, on a side of a support base; growing a heat sink base layer on a side of the seed layer; depositing a hard mask on a side of the support base directly opposite that containing the seed and heat sink base layers; patterning the hard mask with a photoresist mask; etching the patterned hard mask with an etching technique, wherein the etching creates trenches in the underlying support base, exposing the seed layer; removing the hard mask with a hard mask removal technique; depositing a layer of photoresist on the heat sink base layer; growing heat sinks using a heat sink growth technique on the exposed seed layer; removing the photoresist layer with a photoresist layer removal technique; and removing the support base with a support base removal technique.