Patents by Inventor Mohammad Abdo

Mohammad Abdo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon germanium mask for deep silicon etching
    Patent number: 8791021
    Abstract: Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF6/O2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from ?80 degrees Celsius to ?140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.
    Type: Grant
    Filed: March 1, 2012
    Date of Patent: July 29, 2014
    Assignee: King Abdullah University of Science and Technology
    Inventors: Mohamed Serry, Andrew Rubin, Mohamed Refaat, Sherif Sedky, Mohammad Abdo
  • SILICON GERMANIUM MASK FOR DEEP SILICON ETCHING
    Publication number: 20120225557
    Abstract: Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF6/O2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from ?80 degrees Celsius to ?140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.
    Type: Application
    Filed: March 1, 2012
    Publication date: September 6, 2012
    Applicants: THE AMERICAN UNIVERSITY IN CAIRO, KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Mohamed Serry, Andrew Rubin, Mohamed Refaat, Sherif Sedky, Mohammad Abdo