Abstract: An integrated circuit structure includes a device layer including a first set of devices and a second set of devices. An interconnect layer is above the device layer, where the interconnect layer includes one or more conductive interconnect features within dielectric material. In an example, a first ring structure including conductive material extends within the interconnect layer, and a second ring structure including conductive material extends within the interconnect layer. In an example, the second ring structure is non-overlapping with the first ring structure. In an example, the first ring structure is above the first set of devices of the device layer, and the second ring structure is above the second set of devices of the device layer.

Abstract: Quasi-monolithic multi-die composites including a primary fill structure within a space between adjacent IC dies. A fill material layer, which may have inorganic composition, may be bonded to a host substrate and patterned to form a primary fill structure that occupies a first portion of the host substrate. IC dies may be bonded to regions of the host substrate within openings where the primary fill structure is absent to have a spatial arrangement complementary to the primary fill structure. The primary fill structure may have a thickness substantially matching that of IC dies and/or be co-planar with a surface of one or more of the IC dies. A gap fill material may then be deposited within remnants of the openings to form a secondary fill structure that occupies space between the IC dies and the primary fill structure.

Abstract: Composite integrated circuit (IC) device processing, including selective removal of inorganic dielectric material. Inorganic dielectric material may be deposited, modified with laser exposure, and selectively removed. Laser exposure parameters may be adjusted using surface topography measurements. Inorganic dielectric material removal may reduce surface topography. Vias and trenches of varying size, shape, and depth may be concurrently formed without an etch-stop layer. A composite IC device may include an IC die, a conductive via, and a conductive line adjacent a compositionally homogenous inorganic dielectric material.

Abstract: Techniques and mechanisms to mitigate warping of a composite chiplet. In an embodiment, multiple via structures each extend through an insulator material in one of multiple levels of a composite chiplet. The insulator material extends around an integrated circuit (IC) component in the level. For a given one of the multiple via structures, a respective annular structure extends around the via structure to mitigate a compressive (or tensile) stress due to expansion (or contraction) of the via structure. In another embodiment, the composite chiplet additionally or alternatively comprises a structural support layer on the multiple levels, wherein the structural support layer has formed therein or thereon dummy via structures or a warpage compensation film.

Abstract: Multi-die composite structures including a multi-layered inorganic dielectric gap fill material within a space between adjacent IC dies. A first layer of fill material with an inorganic composition may be deposited over IC dies with a high-rate deposition process, for example to at least partially fill a space between the IC dies. The first layer of fill material may then be partially removed to modify a sidewall slope of the first layer or otherwise reduce an aspect ratio of the space between the IC dies. Another layer of fill material may be deposited over the lower layer of fill material, for example with the same high-rate deposition process. This dep-etch-dep cycle may be repeated any number of times to backfill spaces between IC dies. The multi-layer fill material may then be globally planarized and the IC die package completed and/or assembled into a next-level of integration.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die and a through-dielectric via (TDV) surrounded by a dielectric material in a first layer, where the TDV has a greater width at a first surface and a smaller width at an opposing second surface of the first layer; a second die, surrounded by the dielectric material, in a second layer on the first layer, where the first die is coupled to the second die by interconnects having a pitch of less than 10 microns, and the dielectric material around the second die has an interface seam extending from a second surface of the second layer towards an opposing first surface of the second layer with an angle of less than 90 degrees relative to the second surface; and a substrate on and coupled to the second layer.

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of IC dies, adjacent layers in the plurality of layers being coupled together by first interconnects and a package substrate coupled to the plurality of layers by second interconnects. A first layer in the plurality of layers comprises a dielectric material surrounding a first IC die in the first layer, a second layer in the plurality of layers is adjacent and non-coplanar with the first layer, the second layer comprises a first circuit region and a second circuit region separated by a third circuit region, the first circuit region and the second circuit region are bounded by respective guard rings, and the first IC die comprises conductive pathways conductively coupling conductive traces in the first circuit region with conductive traces in the second circuit region.

Abstract: Techniques and mechanisms to mitigate corrosion to via structures of a composite chiplet. In an embodiment, a composite chiplet comprises multiple integrated circuit (IC) components which are each in a different respective one of multiple levels. One or more conductive vias extend through an insulator layer in a first level of the multiple levels. An annular structure of the composite chiplet extends vertically through the insulator layer, and surrounds the one or more conductive vias in the insulator layer. The annular structure mitigates an exposure of the one or more conductive vias to moisture which is in a region of the insulator layer that is not surrounded by the annular structure. In another embodiment, the annular structure further surrounds an IC component which extends in the insulator layer.

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of IC dies in a dielectric material, adjacent layers in the plurality of layers being coupled together by first interconnects having a pitch of less than 10 micrometers between adjacent first interconnects; a package substrate coupled to a first side of the plurality of layers by second interconnects; a support structure coupled to a second side of the plurality of layers by third interconnects, the second side being opposite to the first side; and capacitors in at least the plurality of layers or the support structure. The capacitors are selected from at least planar capacitors, deep trench capacitors and via capacitors.

Abstract: Multi-die packages including IC die crack mitigation features. Prior to the bonding of IC dies to a host substrate, the IC dies may be shaped, for example with a corner radius or chamfer. After bonding the shaped IC dies, a fill comprising at least one inorganic material may be deposited over the IC dies, for example to backfill a space between adjacent IC dies. With the benefit of a greater IC die sidewall slope and/or smoother surface topology associated with the shaping process, occurrences of stress cracking within the fill and concomitant damage to the IC dies may be reduced. Prior to depositing a fill, a barrier layer may be deposited over the IC die to prevent cracks that might form in the fill material from propagating into the IC die.

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more integrated circuit dies bonded to a base die, a conformal thermal heat spreading layer on the top and sidewalls of the integrated circuit dies, and an inorganic dielectric material on a portion of the conformal thermal heat spreading layer, laterally adjacent the integrated circuit dies, and over the base die. The conformal thermal heat spreading layer includes a high thermal conductivity material to provide a thermal pathway for the integrated circuit dies during operation.

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more integrated circuit dies bonded to a base die and an inorganic dielectric material adjacent the integrated circuit dies and over the base die. The multichip composite device includes a dummy die, dummy vias, or integrated fluidic cooling channels laterally adjacent the integrated circuit dies to conduct heat from the base die.

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more chiplets bonded to a base die and an inorganic dielectric material adjacent the chiplets and over the base die. The multichip composite device is coupled to a structural member that is made of or includes a heat conducting material, or has integrated fluidic cooling channels to conduct heat from the chiplets and the base die.

Abstract: Embodiments of the disclosure are directed to advanced integrated circuit structure fabrication and, in particular, to heat transfer solutions for transistors. Other embodiments may be described or claimed.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques for providing a hermetic seal for a layer of transistors with metal on both sides that are on a substrate. The layer of transistors may be within a die or within a portion of a die. The hermetic seal may include a hermetic layer on one side of the layer of transistors and a hermetic layer on the opposite side of the transistors. In embodiments, one or more metal walls may be constructed through the transistor layer, with metal rings placed around either side of the layer of transistors and hermetically coupling with the two hermetic layers. Other embodiments may be described and/or claimed.

Abstract: A microelectronic package structure with inorganic fill material having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die between the second and third dies. A second layer is over the first layer, the second layer comprising an inorganic dielectric material, wherein a top surface of the second layer is substantially coplanar with top surfaces of the second and third dies.

Abstract: Stacked die assemblies having a moisture sealant layer according to embodiments are described herein. A microelectronic package structure having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die adjacent sidewalls of the second and the third dies, and adjacent an edge portion of the first die. The first layer comprises a diffusion barrier material A second layer is over the first layer, the second layer, wherein a top surface of the second layer is substantially coplanar with the top surfaces of the second and third dies. The first layer provides a hermetic moisture sealant layer for stacked die package structures.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques for a barrier that surrounds one or more dies which are electrically coupled with one or more electrical connections on a wafer. The barrier may be a hermetic barrier that is formed on a wafer prior to singulation to prevent moisture intrusion from a side of the wafer that may compromise the one or more electrical connections. Other embodiments may be described and/or claimed.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component, having a first surface and an opposing second surface including a first direct bonding region at the second surface with first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component, having a first surface and an opposing second surface, including a second direct bonding region at the first surface with second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the second microelectronic component is coupled to the first microelectronic component by the first and second direct bonding regions; and a shield structure in the first direct bonding dielectric material at least partially surrounding the one or more of the first metal contacts.

Abstract: Disclosed herein are microelectronic assemblies including microelectronic components coupled by direct bonding, and related structures and techniques. In some embodiments, a microelectronic assembly may include a first microelectronic component including a first guard ring extending through at least a portion of a thickness of and along a perimeter; a second microelectronic component including a second guard ring extending through at least a portion of a thickness of and along a perimeter, where the first and second microelectronic components are coupled by direct bonding; and a seal ring formed by coupling the first guard ring to the second guard ring. In some embodiments, a microelectronic assembly may include a microelectronic component coupled to an interposer that includes a first liner material at a first surface; a second liner material at an opposing second surface; and a perimeter wall through the interposer and connected to the first and second liner materials.