Abstract: Disclosed is an implant and method of making an implant. The implant having a housing that defines a cavity. The housing includes a sensor comprising a base attached to a diaphragm wherein said base may be positioned within said cavity. The sensor may be a capacitive pressure sensor. The diaphragm may be connected to the housing to hermetically seal said housing. The sensor may include electrical contacts positioned on the diaphragm. The attachment between the base and the diaphragm may define a capacitive gap and at least one discontinuity configured to enhance at least one performance parameter of said implant.

Abstract: Disclosed is an implant and method of making an implant. The implant having a housing that defines a cavity. The housing includes a sensor comprising a base attached to a diaphragm wherein said base may be positioned within said cavity. The sensor may be a capacitive pressure sensor. The diaphragm may be connected to the housing to hermetically seal said housing. The sensor may include electrical contacts positioned on the diaphragm. The attachment between the base and the diaphragm may define a capacitive gap and at least one discontinuity configured to enhance at least one performance parameter of said implant.

Abstract: Disclosed is an implant and method of making an implant. The implant having a housing that defines a cavity. The housing includes a sensor comprising a base attached to a diaphragm wherein said base may be positioned within said cavity. The sensor may be a capacitive pressure sensor. The diaphragm may be connected to the housing to hermetically seal said housing. The sensor may include electrical contacts positioned on the diaphragm. The attachment between the base and the diaphragm may define a capacitive gap and at least one discontinuity configured to enhance at least one performance parameter of said implant.

Abstract: Disclosed is an implant and method of making an implant. The implant having a housing that defines a cavity. The housing includes a sensor comprising a base attached to a diaphragm wherein said base may be positioned within said cavity. The sensor may be a capacitive pressure sensor. The diaphragm may be connected to the housing to hermetically seal said housing. The sensor may include electrical contacts positioned on the diaphragm. The attachment between the base and the diaphragm may define a capacitive gap and at least one discontinuity configured to enhance at least one performance parameter of said implant.

Abstract: A Coriolis-based bulk acoustic wave gyroscope includes a center-supported resonating element with capacitively-coupled drive, sense, and control electrodes. The resonating element has a first substantially solid or perforated region which is connected to the center-support by a second region characterized by a plurality of spokes or beams. When operating in a resonance state, the first region undergoes a bulk acoustic mode of vibration while the second region undergoes a flexural mode of vibration. Energy losses associated with the flexural mode of vibration reduce the overall quality factor (Q) at high resonance frequencies creating a large bandwidth and a fast response time without needing vacuum.

Abstract: Disclosed are methods and a sensor architecture that utilizes the residual quadrature error in a gyroscope to achieve and maintain perfect mode-matching, i.e., ˜0 Hz split between the drive and sense mode frequencies, and to electronically control sensor bandwidth. In a reduced-to-practice embodiment, a 6 mW, 3V CMOS ASIC and control algorithm are interfaced to a mode-matched MEMS tuning fork gyroscope to implement an angular rate sensor with bias drift as low as 0.15°/hr and angle random walk of 0.003°/?hr, which is the lowest recorded to date for a silicon MEMS gyroscope. The system bandwidth can be configured between 0.1 Hz and 1 kHz.

Abstract: A Coriolis-based bulk acoustic wave gyroscope includes a center-supported resonating element with capacitively-coupled drive, sense, and control electrodes. The resonating element has a first substantially solid or perforated region which is connected to the center-support by a second region characterized by a plurality of spokes or beams. When operating in a resonance state, the first region undergoes a bulk acoustic mode of vibration while the second region undergoes a flexural mode of vibration. Energy losses associated with the flexural mode of vibration reduce the overall quality factor (Q) at high resonance frequencies creating a large bandwidth and a fast response time without needing vacuum.

Abstract: Disclosed are methods and a sensor architecture that utilizes the residual quadrature error in a gyroscope to achieve and maintain perfect mode-matching, i.e., ˜0 Hz split between the drive and sense mode frequencies, and to electronically control sensor bandwidth. In a reduced-to-practice embodiment, a 6 mW, 3V CMOS ASIC and control algorithm are interfaced to a mode-matched MEMS tuning fork gyroscope to implement an angular rate sensor with bias drift as low as 0.15°/hr and angle random walk of 0.003°/?hr, which is the lowest recorded to date for a silicon MEMS gyroscope. The system bandwidth can be configured between 0.1 Hz and 1 kHz.

Abstract: Disclosed are methods and a sensor architecture that utilizes the residual quadrature error in a gyroscope to achieve and maintain perfect mode-matching, i.e., ˜0 Hz split between the drive and sense mode frequencies, and to electronically control sensor bandwidth. In a reduced-to-practice embodiment, a 6 mW, 3V CMOS ASIC and control algorithm are interfaced to a mode-matched MEMS tuning fork gyroscope to implement an angular rate sensor with bias drift as low as 0.15°/hr and angle random walk of 0.003°/?hr, which is the lowest recorded to date for a silicon MEMS gyroscope. The system bandwidth can be configured between 0.1 Hz and 1 kHz.

Abstract: Disclosed are methods and a sensor architecture that utilizes the residual quadrature error in a gyroscope to achieve and maintain perfect mode-matching, i.e., ˜0 Hz split between the drive and sense mode frequencies, and to electronically control sensor bandwidth. In a reduced-to-practice embodiment, a 6 mW, 3V CMOS ASIC and control algorithm are interfaced to a mode-matched MEMS tuning fork gyroscope to implement an angular rate sensor with bias drift as low as 0.15°/hr and angle random walk of 0.003°/?hr, which is the lowest recorded to date for a silicon MEMS gyroscope. The system bandwidth can be configured between 0.1 Hz and 1 kHz.

Abstract: Disclosed are resonant vibratory gyroscopes and fabrication methods relating thereto. The angular motion sensor comprises a resonating star gyroscope which comprises a vibratory solid or shell-type structure for rate sensing or measuring angle of rotation. The structure formed as a merged superposition of two square entities, yields in-plane degenerate flexural modes that are used to sense rotation around the axis perpendicular to the substrate. The resonating star gyroscope may be implemented using the primary flexural degenerate modes. Such an implementation has been successfully demonstrated by the authors using trench-refilled polysilicon and epitaxial polysilicon as the structural material. It is also possible to use a solid star-shaped resonator (with or without perforations) for the gyroscope. The authors also suggest the operation of the resonating star gyroscope employing the higher-order flexural modes.

Abstract: A microstructure comprising an in-plane solid-mass electrically conductive tuning fork gyroscope and fabrication methods. The gyroscope is formed using substrate material having lower and upper layers sandwiching a sacrificial insulating layer. An exemplary gyroscope comprises a low-resistivity single-crystal silicon substrate having a lower support layer and an upper flexible support layer. Two opposed proof masses that are separated from the lower support layer lie in and are supported by the upper flexible support layer. Two drive electrodes are disposed adjacent to the proof masses and are insulatably supported by the lower support layer and are separated from the upper flexible support layer. Sense, balance and tuning electrodes are disposed adjacent to the proof masses and are insulatably supported by the lower support layer and are separated from the upper flexible support layer.