Abstract: An electronic device characterized by a 10-300 micron thick sapphire crystal substrate having a polished off a-plane growth surface, a 10-1000 angstrom thick nucleating layer disposed on the substrate for promoting film growth thereon, and a 0.1-10 micron thick semiconducting film disposed on the nucleating layer.

Abstract: An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.

Abstract: An amorphous compound is changed to single crystal structure by heating at an elevated temperature in an inert atmosphere or in an atmosphere of a forming gas, the amorphous compound is composed of at least one Group III-A element of the Periodic Table and at least one Group V-A element, the amorphous compound having an excess over stoichiometric amount of at least one Group V-A element. The single crystal phase compound, intrinsically doped with at least one element from Group V-A, has the properties of high conductivity for a semiconductor without using any extrinsic dopant and a non-alloyed ohmic contact with a metal.

Abstract: A method of measuring the lattice parameter in an unknown single crystal by omparing its diffraction angle to a standard single crystal, on a double-crystal diffractometer is disclosed.

Abstract: Apparatus for providing remote-operated two dimensional translation in a tical plane in an accurate and reliable manner for use in a laboratory sampling system, comprises two translation stages with a moveable slide affixed to one of such stages, mounted so as to be independently translatable in orthogonal directions in the vertical plane and are coupled to an integral drive system in such a manner so as to result in a compact unit.

Abstract: A multi-electrode grid for aligning polarized particles such as asbestos hin a dielectric medium.

Abstract: A system for identifying chrysotile asbestos as well as other asbestiform bers in air pollution samples which comprises a collimated x-ray beam which is incident on parallel aligned asbestos fibers. Diffracted x-rays are detected by a proportional counter set at the diffraction line position for the (002) plane. Background intensity may be detected by a second counter set above the axis, or the sample may be rotated 90.degree. and the one detector used to detect diffracted and background x-rays.

Abstract: A method of forming parallel aligned chrysotile asbestos fibers on a thin bstrate for use in a system for identifying the chrysotile asbestos in air pollution samples. The system comprises a collimated x-ray beam which is incident on the parallel aligned asbestos fibers. Diffracted x-rays are detected by an adjustable proportional counter set at the diffraction line position for the (002) plane. Background intensity may be detected by a second adjustable counter set above the axis at the same angle 2.theta., or the sample may be rotated 90.degree. and the one detector used to detect diffracted and background x-rays.