Patents by Inventor Mohammad Hafijur Rahman

Mohammad Hafijur Rahman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS SRAM/ROM unified bit cell
    Patent number: 7710761
    Abstract: A memory cell including a bit and bitnot sense lines as well as a random access memory (RAM) word line and a read only memory (ROM) word line. The memory cell particularly includes a static RAM (SRAM) bit cell and a ROM bit cell. The SRAM bit cell is coupled between the bit and bitnot sense lines, and is responsive to a signal on the RAM word line. The ROM bit cell is also coupled between the bit and bitnot sense lines, and is responsive to a signal on the ROM word line. The ROM bit cell includes first and second ROM pass transistors, a first node for permanently programming connection of the first ROM pass transistor to either a voltage line or a ground line, and a second node for permanently programming connection of the second ROM pass transistor to either the voltage line or the ground line.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: May 4, 2010
    Assignee: VNS Portfolio LLC
    Inventors: Dennis Ray Miller, Mohammad Hafijur Rahman, Mohammad Ehsanul Kabir
  • CMOS SRAM/ROM UNIFIED BIT CELL
    Publication number: 20080170430
    Abstract: A memory cell including a bit and bitnot sense lines as well as a random access memory (RAM) word line and a read only memory (ROM) word line. The memory cell particularly includes a static RAM (SRAM) bit cell and a ROM bit cell. The SRAM bit cell is coupled between the bit and bitnot sense lines, and is responsive to a signal on the RAM word line. The ROM bit cell is also coupled between the bit and bitnot sense lines, and is responsive to a signal on the ROM word line. The ROM bit cell includes first and second ROM pass transistors, a first node for permanently programming connection of the first ROM pass transistor to either a voltage line or a ground line, and a second node for permanently programming connection of the second ROM pass transistor to either the voltage line or the ground line.
    Type: Application
    Filed: January 12, 2007
    Publication date: July 17, 2008
    Applicant: Technology Properties Limited
    Inventors: Dennis Ray Miller, Mohammad Hafijur Rahman, Mohammad Ehsanul Kabir