Abstract: A device for measuring pressure includes a curved microbeam having opposing ends, a length extending between the pair of opposing ends, and a plurality of resonant frequencies, an actuating electrode extending along the length of the curved microbeam and spaced from the curved microbeam, an AC power source in communication with one of the opposing ends and the actuating electrode to deliver an AC signal at a first symmetric resonant frequency and a second symmetric resonant frequency selected from the plurality of resonant frequencies to the curved microbeam, a DC power source in communication with the opposing ends to pass an electrothermal voltage along a length of the curved microbeam, and a frequency monitoring device to monitor changes in the first symmetric resonant frequency and the second symmetric resonant frequency caused by an ambient pressure surrounding the curved microbeam.

Abstract: The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.

Abstract: A combined vapor and/or gas concentration sensor and switch includes a resonating structure, a first alternating current, AC, voltage source coupled to a drive electrode, the first AC voltage source providing the resonating structure with a first voltage having an amplitude causing a first vibration mode of the resonating structure to exhibit a pull-in band and having a first frequency response adjacent to the pull-in band, where the first frequency response is nonlinear, a second AC voltage source coupled to the drive electrode and providing a second voltage having a frequency so that a second frequency response of the resonant structure, adjacent to a third vibration mode, is linear, and a read-out circuit coupled configured to determine a vapor and/or gas concentration based on a difference between (1) the frequency of the second voltage and (2) a frequency obtained by the read-out circuit from the resonating structure.

Abstract: A passband filter includes a first and second microelectromechanical resonator system, each including a resonating beam, a drive electrode, and a sense electrode. An AC input signal is coupled to the drive electrode of the first and second microelectromechanical resonator system. A differential-to-single ended amplifier has a first input and second input respectively coupled to the sense electrodes of the first and second microelectromechanical resonator systems. An output of the differential-to-single ended amplifier is an output of the passband filter that provides a bandpass filtered signal of the AC input signal. A DC bias signal is coupled to the resonating beams of the first and second microelectromechanical resonator systems.

Abstract: A gas sensor includes a microbeam configured to vibrate when driven by a driving electrode; a vibrometer configured to measure a frequency associated with a vibration of the microbeam; a power source configured to apply a first voltage (V1) to the microbeam to heat the microbeam; and a controller configured to control the power source and to receive the frequency measured by the vibrometer. The controller controls the power source to heat the microbeam so that the microbeam is at a buckling point, and the controller determines at least one characteristic of a gas present around the microbeam, based on the frequency received from the vibrometer.

Abstract: A device for measuring pressure includes a curved microbeam having opposing ends, a length extending between the pair of opposing ends, and a plurality of resonant frequencies, an actuating electrode extending along the length of the curved microbeam and spaced from the curved microbeam, an AC power source in communication with one of the opposing ends and the actuating electrode to deliver an AC signal at a first symmetric resonant frequency and a second symmetric resonant frequency selected from the plurality of resonant frequencies to the curved microbeam, a DC power source in communication with the opposing ends to pass an electrothermal voltage along a length of the curved microbeam, and a frequency monitoring device to monitor changes in the first symmetric resonant frequency and the second symmetric resonant frequency caused by an ambient pressure surrounding the curved microbeam.

Abstract: An electromechanical pressure sensor includes an electromechanical resonator having a driving electrode, a sensing electrode, and a beam resonator arranged between the driving and sensing electrodes. The beam resonator includes a resonator beam coupled on a first end to a first fixed anchor and coupled on a second end to a fixed second fixed anchor. The electromechanical resonator also includes a first voltage source coupled to the driving electrode and configured to provide an alternating current to the driving electrode and a second voltage source coupled to the first fixed anchor. The second voltage source provides a DC bias to the resonator beam. The electromechanical resonator further includes a third voltage source coupled to the resonator beam via the first and second fixed anchors. The third voltage source is configured to supply a voltage to the resonator beam that results in a temperature differential between the resonator beam and the first and second fixed anchors.

Abstract: A cascadable resonator logic system includes a substrate; a first straight beam anchored with a first end to the substrate; a second straight beam anchored with a first end to the substrate; a first arch beam, which is curved, and is attached with a first end to a second end of the first straight beam, at a first joint, and with a second end to a second end of the second straight beam, at a second joint, so that both the first and second ends of the first arch beam are suspended above the substrate; and a second arch beam, which is also curved, and is attached with a first end to the second joint, and a second end is anchored to the substrate.

Abstract: A vapor and/or gas concentration and temperature sensor includes a resonating structure having a first side with a functionalized surface and a second side opposite the first side, a first resonant frequency of a first vibration mode, and a second resonating frequency of a second vibration mode. Drive and sensing electrodes face the second side of the resonating structure. A direct current bias source is coupled to the resonating structure. A first AC voltage source provides the resonating structure with a first voltage having a frequency corresponding to the first resonant frequency. A second AC voltage source provides the resonating structure with a second voltage having a frequency corresponding to the second resonant frequency.

Abstract: This invention relates to a therapeutic molecule capable of suppressing an immune response against an organ or tissue transplantation in a patient. In particular, the invention relates to a conjugate comprising a first portion connected to a second portion, wherein the first portion binds to an MHC Class I molecule and the second portion has HLA-G activity. This conjugate may be used as a medicament to modulate immune responses and induce immunological tolerance specific to allogenic MHC complexes.

Abstract: A logic system includes a microelectromechanical system, MEMS, resonator having an arch beam and first and second side beams, wherein the first side beam is attached with a first end to a first end of the arch beam and the second side beam is attached with a first end to a second end of the arch beam to form a U-shape; an input electrode facing the second side beam; a selector electrode facing the second side beam; a first output electrode facing the first side beam; and a second output electrode facing the arch beam.

Abstract: Embodiments include a logic gate system comprising a first micro-cantilever beam arranged in parallel to a second micro-cantilever beam in which a length of the first micro-cantilever beam is shorter than a length of the second micro-cantilever beam. The first micro-cantilever beam is adjacent to the second micro-cantilever beam and the first micro-cantilever beam is coupled to an input DC bias voltage source to the logic gate system. The second micro-cantilever beam is coupled to an input AC voltage signal that dynamically sets a logic operation of the logic gate system by at least changing an operating resonance frequency for one or more of the first micro-cantilever beam and the second micro-cantilever beam.

Abstract: An electromechanical pressure sensor includes an electromechanical resonator having a driving electrode, a sensing electrode, and a beam resonator arranged between the driving and sensing electrodes. The beam resonator includes a resonator beam coupled on a first end to a first fixed anchor and coupled on a second end to a fixed second fixed anchor. The electromechanical resonator also includes a first voltage source coupled to the driving electrode and configured to provide an alternating current to the driving electrode and a second voltage source coupled to the first fixed anchor. The second voltage source provides a DC bias to the resonator beam. The electromechanical resonator further includes a third voltage source coupled to the resonator beam via the first and second fixed anchors. The third voltage source is configured to supply a voltage to the resonator beam that results in a temperature differential between the resonator beam and the first and second fixed anchors.

Abstract: Embodiments include a logic gate system comprising a first micro-cantilever beam arranged in parallel to a second micro-cantilever beam in which a length of the first micro-cantilever beam is shorter than a length of the second micro-cantilever beam. The first micro-cantilever beam is adjacent to the second micro-cantilever beam and the first micro-cantilever beam is coupled to an input DC bias voltage source to the logic gate system. The second micro-cantilever beam is coupled to an input AC voltage signal that dynamically sets a logic operation of the logic gate system by at least changing an operating resonance frequency for one or more of the first micro-cantilever beam and the second micro-cantilever beam.

Abstract: A vapor and/or gas concentration and temperature sensor includes a resonating structure having a first side with a functionalized surface and a second side opposite the first side, a first resonant frequency of a first vibration mode, and a second resonating frequency of a second vibration mode. Drive and sensing electrodes face the second side of the resonating structure. A direct current bias source is coupled to the resonating structure. A first AC voltage source provides the resonating structure with a first voltage having a frequency corresponding to the first resonant frequency. A second AC voltage source provides the resonating structure with a second voltage having a frequency corresponding to the second resonant frequency.

Abstract: A combined vapor and/or gas concentration sensor and switch includes a resonating structure having a first side with a functionalized surface and a second side opposite the first side, a first resonant frequency of a first vibration mode, and a third resonant frequency of a third vibration mode. A direct current bias source is coupled to the resonating structure. A first AC voltage source is coupled to the drive electrode and provides the resonating structure, via the drive electrode, with a first voltage having an amplitude causing the first vibration mode of the resonating structure to exhibit a pull-in band and having a frequency adjacent the pull-in band of the first mode. A second AC voltage source is coupled to the drive electrode and provides the resonating structure, via the drive electrode, with a second voltage having a frequency corresponding to the third resonant frequency.

Abstract: Embodiments of a tunable bandpass microelectromechanical (MEMS) filter are described. In one embodiment, such a filter includes a pair of arch beam microresonators, and a pair of voltage sources electrically coupled to apply a pair of adjustable voltage biases across respective ones of the pair of arch beam microresonators. The pair of voltage sources offer independent tuning of the bandwidth of the filter. Based on the structure and arrangement of the filter, it can be tunable by 125% or more by adjustment of the adjustable voltage bias. The filter also has a relatively low bandwidth distortion, can exhibit less than 2.5 dB passband ripple, and can exhibit sideband rejection in the range of at least 26 dB.

Abstract: A passband filter includes a first and second microelectromechanical resonator system, each including a resonating beam, a drive electrode, and a sense electrode. An AC input signal is coupled to the drive electrode of the first and second microelectromechanical resonator system. A differential-to-single ended amplifier has a first input and second input respectively coupled to the sense electrodes of the first and second microelectromechanical resonator systems. An output of the differential-to-single ended amplifier is an output of the passband filter that provides a bandpass filtered signal of the AC input signal. A DC bias signal is coupled to the resonating beams of the first and second microelectromechanical resonator systems.

Abstract: The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.

Abstract: The endodontic obturator for bioactive material delivery includes a shaft having opposed tip and shank ends, and a fluted portion located adjacent the tip end and having at least one flute spiraling along an axial length thereof. As a non-limiting example, the shaft may be formed from a nickel-titanium alloy coated with polytetrafluoroethylene. The forward portion is tapered toward the tip end, and the tip end is flat, with a fan-like cross-section, defining a plurality of radial lands. As a non-limiting example, three radial lands, each with a neutral rake angle, may be defined on the tip end.