Abstract: A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.

Abstract: A plasma-generation system is provided that includes a variable-frequency microwave generator configured to generate microwave power and a plasma applicator configured to use the microwave power from the microwave generator to (i) ignite a process gas therein for initiating a plasma in a plasma ignition process and (ii) maintain the plasma in a steady state process. The system also includes a coarse tuner connected between the microwave generator and the plasma applicator. At least one physical parameter of the coarse tuner is adapted to be set to achieve coarse impedance matching between the microwave generator and the plasma generated during both the plasma ignition process and the steady state process. A load impedance of the plasma generated during the plasma ignition process and the steady state process is adapted to vary. The microwave generator is configured to tune an operating frequency at the set physical parameter of the coarse tuner.

Abstract: A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.

Abstract: A microwave system for use within a microwave-assisted thermal atomic layer deposition system is disclosed which include at least one microwave generator configured to output at least one microwave signal, at least one waveguide assembly in communication with the at least one microwave generator and configured to receive the microwave signal, one or more isolators positioned within the waveguide assembly and configured to reduce or eliminate backscatter of the microwave signal from the waveguide assembly to the at least one microwave generator, at least one tuning device in positioned within the waveguide assembly and configured receive the microwave signal from the isolator and tune the microwave signal, and at least one microwave delivery device in communication with the waveguide assembly and configured to direct at least a portion of the microwave signal into at least one processing chamber of the microwave-assisted thermal atomic layer deposition system.

Abstract: A microwave system has a solid-state generator which generates microwave energy and includes at least one control input for receiving a control signal to vary electrically a parameter of the microwave energy. A microwave load receives the microwave energy and produces an effect in response to the microwave energy. A microwave conducting element couples the microwave energy to the microwave load. An impedance match adjusting device is coupled to the microwave conducting element to vary at least one of the parameters of the microwave energy. The effect produced in response to the microwave energy is altered by both electrical variation of the parameter of the microwave energy via the control signal and adjustment of the impedance match adjusting device to vary the parameter of the microwave energy.

Abstract: A microwave system has a solid-state generator which generates microwave energy and includes at least one control input for receiving a control signal to vary electrically a parameter of the microwave energy. A microwave load receives the microwave energy and produces an effect in response to the microwave energy. A microwave conducting element couples the microwave energy to the microwave load. An impedance match adjusting device is coupled to the microwave conducting element to vary at least one of the parameters of the microwave energy. The effect produced in response to the microwave energy is altered by both electrical variation of the parameter of the microwave energy via the control signal and adjustment of the impedance match adjusting device to vary the parameter of the microwave energy.

Abstract: A plasma generation system includes a reference clock, a plurality of solid state generator modules, and a processing chamber. The reference clock is configured to generate a reference signal. Each solid state generator module is linked to an electronic switch and each electronic switch is linked to the reference clock. The solid state generator modules are each configured to generate an output based on the reference signal from the reference clock. The processing chamber is configured to receive the output of at least two of the solid state generator modules to combine the outputs of said solid state generator modules therein.

Abstract: A microwave system has a solid-state generator which generates microwave energy and includes at least one control input for receiving a control signal to vary electrically a parameter of the microwave energy. A microwave load receives the microwave energy and produces an effect in response to the microwave energy. A microwave conducting element couples the microwave energy to the microwave load. An impedance match adjusting device is coupled to the microwave conducting element to vary at least one of the parameters of the microwave energy. The effect produced in response to the microwave energy is altered by both electrical variation of the parameter of the microwave energy via the control signal and adjustment of the impedance match adjusting device to vary the parameter of the microwave energy.

Abstract: A microwave system has a solid-state generator which generates microwave energy and includes at least one control input for receiving a control signal to vary electrically a parameter of the microwave energy. A microwave load receives the microwave energy and produces an effect in response to the microwave energy. A microwave conducting element couples the microwave energy to the microwave load. An impedance match adjusting device is coupled to the microwave conducting element to vary at least one of the parameters of the microwave energy. The effect produced in response to the microwave energy is altered by both electrical variation of the parameter of the microwave energy via the control signal and adjustment of the impedance match adjusting device to vary the parameter of the microwave energy.

Abstract: A plasma applicator includes a plasma discharge tube and a microwave cavity at least partially surrounding a portion of the plasma discharge tube. Microwave energy is coupled to the microwave cavity via a coupling iris. At least two orthogonal dimensions of the microwave cavity are selected such that the microwave energy in the microwave cavity propagates in a transverse electric (TE) mode. Primary electric fields generated from the microwave energy combine with an evanescent electric field generated from the coupling iris, such that a combined electric field in the microwave cavity is substantially uniform along the longitudinal axis of the plasma discharge tube. A plurality of radial microwave chokes is disposed over an exterior of the plasma discharge tube. Positions of the microwave chokes are such that microwave energy propagating in the TE mode and a transverse electric magnetic (TEM) mode is attenuated.

Abstract: A plasma applicator includes a plasma discharge tube and a microwave cavity at least partially surrounding a portion of the plasma discharge tube. Microwave energy is coupled to the microwave cavity via a coupling iris. At least two orthogonal dimensions of the microwave cavity are selected such that the microwave energy in the microwave cavity propagates in a transverse electric (TE) mode. Primary electric fields generated from the microwave energy combine with an evanescent electric field generated from the coupling iris, such that a combined electric field in the microwave cavity is substantially uniform along the longitudinal axis of the plasma discharge tube. A plurality of radial microwave chokes is disposed over an exterior of the plasma discharge tube. Positions of the microwave chokes are such that microwave energy propagating in the TE mode and a transverse electric magnetic (TEM) mode is attenuated.

Abstract: A method for minimizing microwave leakage into processing chamber of a microwave plasma system is provided. The method includes securing plasma traps to a plasma tube assembly, which is a cylindrical structure positioned upstream from the processing chamber and has a plasma-sustaining region. The plasma traps are electrically conductive disks surrounding the cylindrical structure and are positioned upstream from the processing chamber. The plasma traps include at least two electrically conductive disks. Each electrically conductive disk includes corrugated outer surfaces with plurality of corrugated peaks. The corrugated outer surface of the first electrically conductive disk is facing a corrugated outer surface of the second electrically conductive disk in a space-apart relationship to form an interstitial region between the electrically conductive disks.

Abstract: A gas distribution arrangement configured to provide a process gas downstream to a plasma tube of a plasma processing chamber. The plasma tube has a top end. The arrangement includes a body having a first end. The first end has a width larger than the plasma tube and a protrusion end adapted to be inserted into the top end. The arrangement also includes a gas inlet vertically disposed in the body. The gas inlet extends from the first end toward the protrusion end and the gas inlet terminates before extending through the protrusion end. The arrangement further includes a plurality of directional inlet channels extending from a lower end of the gas inlet through the protrusion end.

Abstract: A method of cleaning a microwave plasma applicator tube as described herein includes preparing a microwave plasma applicator for cleaning. A general cleaning of the plasma applicator tube is performed using an organic solvent wash and an ultrapure water wash. Selective cleanings of the tube are performed to remove selected contaminants. Such cleanings include a third wash with an alkaline cleaning solution, a fourth wash with an acidic cleaning solution and another wash using an ammonia and peroxide solution. The tube is rinsed using a sonicating wash performed in ultrapure water followed by drying. Also, the coil can be cleaned using acidic wash solution.

Abstract: A method for minimizing microwave leakage into processing chamber of a microwave plasma system is provided. The method includes securing plasma traps to a plasma tube assembly, which is a cylindrical structure positioned upstream from the processing chamber and has a plasma-sustaining region. The plasma traps are electrically conductive disks surrounding the cylindrical structure and are positioned upstream from the processing chamber. The plasma traps include at least two electrically conductive disks. Each electrically conductive disk includes corrugated outer surfaces with plurality of corrugated peaks. The corrugated outer surface of the first electrically conductive disk is facing a corrugated outer surface of the second electrically conductive disk in a space-apart relationship to form an interstitial region between the electrically conductive disks.

Abstract: An arrangement configured to contain plasma within plasma tube assembly of downstream microwave plasma system. Downstream microwave plasma system is configured to generate plasma within plasma-sustaining region of plasma tube assembly and channeling at least portion of plasma downstream to plasma processing chamber of downstream microwave plasma system. Arrangement includes a first hollow center electrically conductive disk surrounding a cylindrical structure that defines plasma passage of plasma tube assembly. Arrangement also includes a second hollow center electrically conductive disk also surrounding the cylindrical structure. Second hollow center electrically conductive disk is configured to be disposed in a spaced-apart relationship relative to first hollow center electrically conductive disk so as to form a first hollow center disk-shape interstitial region between first hollow center electrically conductive disc and second hollow center electrically conductive disc.

Abstract: A plasma system is disclosed. The plasma system includes a microwave waveguide assembly having a longitudinal axis parallel with a first axis. The plasma system also includes a plasma tube assembly intersecting the microwave waveguide assembly. The plasma tube assembly has a longitudinal axis parallel with a second axis that is substantially orthogonal with the first axis. The plasma tube assembly also has a plasma-sustaining region defined by an upstream plurality of plasma traps and a downstream plurality of plasma traps.

Abstract: An arrangement configured to contain plasma within plasma tube assembly of downstream microwave plasma system. Downstream microwave plasma system is configured to generate plasma within plasma-sustaining region of plasma tube assembly and channeling at least portion of plasma downstream to plasma processing chamber of downstream microwave plasma system. Arrangement includes a first hollow center electrically conductive disk surrounding a cylindrical structure that defines plasma passage of plasma tube assembly. Arrangement also includes a second hollow center electrically conductive disk also surrounding the cylindrical structure. Second hollow center electrically conductive disk is configured to be disposed in a spaced-apart relationship relative to first hollow center electrically conductive disk so as to form a first hollow center disk-shape interstitial region between first hollow center electrically conductive disc and second hollow center electrically conductive disc.

Abstract: A plasma generation arrangement configured to provide plasma downstream to a plasma processing chamber. The arrangement includes a microwave waveguide assembly having a longitudinal axis parallel with a first axis. The arrangement also includes a plasma tube assembly intersecting the microwave waveguide assembly. The plasma tube assembly has a longitudinal axis parallel with a second axis that is substantially orthogonal with the first axis. The plasma tube assembly also has a plasma-sustaining region defined by an upstream plurality of plasma traps and a downstream plurality of plasma traps.

Abstract: A gas distribution arrangement configured to provide a process gas downstream to a plasma tube of a plasma processing chamber. The plasma tube has a top end. The arrangement includes a body having a first end. The first end has a width larger than the plasma tube and a protrusion end adapted to be inserted into the top end. The arrangement also includes a gas inlet vertically disposed in the body. The gas inlet extends from the first end toward the protrusion end and the gas inlet terminates before extending through the protrusion end. The arrangement further includes a plurality of directional inlet channels extending from a lower end of the gas inlet through the protrusion end.