Patents by Inventor Mohammad Kasem

Mohammad Kasem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating lateral power MOSFET having metal strap layer to reduce distributed resistance
    Patent number: 6159841
    Abstract: To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus.
    Type: Grant
    Filed: March 8, 1999
    Date of Patent: December 12, 2000
    Assignee: Siliconix incorporated
    Inventors: Richard K. Williams, Mohammad Kasem
  • Vertical power MOSFET having thick metal layer to reduce distributed resistance
    Patent number: 6066877
    Abstract: The on-resistance of a vertical power transistor is substantially reduced by forming a thick metal layer on top of the relatively thin metal layer that is conventionally used to make contact with the individual transistor cells in the device. The thick metal layer is preferably plated electrolessly on the thin metal layer through an opening that is formed in the passivation layer.
    Type: Grant
    Filed: January 6, 1997
    Date of Patent: May 23, 2000
    Assignee: Siliconix Incorporated
    Inventors: Richard K. Williams, Mohammad Kasem
  • Method of fabricating vertical power MOSFET having low distributed resistance
    Patent number: 6043125
    Abstract: The on-resistance of a vertical power transistor is substantially reduced by forming a thick metal layer on top of the relatively thin metal layer that is conventionally used to make contact with the individual transistor cells in the device. The thick metal layer is preferably plated electrolessly on the thin metal layer through an opening that is formed in the passivation layer.
    Type: Grant
    Filed: November 10, 1997
    Date of Patent: March 28, 2000
    Assignee: Siliconix Incorporated
    Inventors: Richard K. Williams, Mohammad Kasem
  • Integrated circuit die having thick bus to reduce distributed resistance
    Patent number: 5945709
    Abstract: To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus.
    Type: Grant
    Filed: August 6, 1997
    Date of Patent: August 31, 1999
    Assignee: Siliconix incorporated
    Inventors: Richard K. Williams, Mohammad Kasem
  • Laternal power mosfet having metal strap layer to reduce distributed resistance
    Patent number: 5767546
    Abstract: To reduce the distributed resistance in an integrated circuit die, a relatively thick metal strap layer is deposited on a bus or other conductive path in the top metal layer. The metal strap layer is formed by etching a longitudinal channel in the passivation layer over the bus and plating a thick metal layer, preferably nickel, in the channel. The metal strap layer dramatically reduces the resistance of the bus.
    Type: Grant
    Filed: December 30, 1994
    Date of Patent: June 16, 1998
    Assignee: Siliconix incorporated
    Inventors: Richard K. Williams, Mohammad Kasem
  • Vertical power mosfet having thick metal layer to reduce distributed resistance
    Patent number: 5665996
    Abstract: The on-resistance of a vertical power transistor is substantially reduced by forming a thick metal layer on top of the relatively thin metal layer that is conventionally used to make contact with the individual transistor cells in the device. The thick metal layer is preferably plated electrolessly on the thin metal layer through an opening that is formed in the passivation layer.
    Type: Grant
    Filed: December 30, 1994
    Date of Patent: September 9, 1997
    Assignee: Siliconix Incorporated
    Inventors: Richard K. Williams, Mohammad Kasem
  • Water-dispersible defoamer composition
    Patent number: 4024072
    Abstract: Water-dispersible defoamer compositions comprise an intimate blend of a mixture of defoaming components and at least one emulsifier to impart water-dispersibility to the composition. The defoaming components include a monoester of an alkenylated succinic acid, a particular organo-phosphorus compound and a silicone oil. The defoamer compositions have particular use in pulp mill defoaming compositions.
    Type: Grant
    Filed: February 18, 1976
    Date of Patent: May 17, 1977
    Assignee: Hart Chemical Limited
    Inventors: Hugh J. S. Shane, Frederick S. Schell, Mohammad A. Kasem