Patents by Inventor Mohammad M. Farahani

Mohammad M. Farahani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150332987
    Abstract: A method for fabricating a microelectronic assembly including a built-in TEC, a microelectronic assembly including a built-in TEC, and a system including the microelectronic assembly. The method includes providing a microelectronic device, and fabricating the TEC directly onto the microelectronic device such that there is no mounting material between the TEC and the microelectronic device.
    Type: Application
    Filed: December 30, 2013
    Publication date: November 19, 2015
    Inventors: Mohammad M. Farahani, Gregory Chrysler, Kris Frutschy
  • Patent number: 8686277
    Abstract: A method for fabricating a microelectronic assembly including a built-in TEC, a microelectronic assembly including a built-in TEC, and a system including the microelectronic assembly. The method includes providing a microelectronic device, and fabricating the TEC directly onto the microelectronic device such that there is no mounting material between the TEC and the microelectronic device.
    Type: Grant
    Filed: December 27, 2004
    Date of Patent: April 1, 2014
    Assignee: Intel Corporation
    Inventors: Mohammad M. Farahani, Gregory Chrysler, Kris Frutschy
  • Publication number: 20140013855
    Abstract: A deflection sensor is disclosed herein. The deflection sensor includes a nanotube film adjacent to a substrate, and first and second contacts electrically connectable with the nanotube film. Methods of making and using the deflection sensor are also disclosed.
    Type: Application
    Filed: September 19, 2013
    Publication date: January 16, 2014
    Inventors: Mohammad M. FARAHANI, Vladimir Noveski, Neha M. Patel, Nachiket R. Raravikar
  • Patent number: 8586393
    Abstract: A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.
    Type: Grant
    Filed: April 11, 2012
    Date of Patent: November 19, 2013
    Assignee: Intel Corporation
    Inventors: Mohammad M. Farahani, Vladimir Noveski, Neha M. Patel, Nachiket R. Raravikar
  • Publication number: 20120193734
    Abstract: A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.
    Type: Application
    Filed: April 11, 2012
    Publication date: August 2, 2012
    Applicant: Intel Corporation
    Inventors: Mohammad M. Farahani, Vladimir Noveski, Neha M. Patel, Nachiket R. Raravikar
  • Patent number: 8174084
    Abstract: A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.
    Type: Grant
    Filed: September 19, 2006
    Date of Patent: May 8, 2012
    Assignee: Intel Corporation
    Inventors: Mohammad M. Farahani, Vladimir Noveski, Neha M. Patel, Nachiket R. Raravikar
  • Publication number: 20080067619
    Abstract: A stress sensor is disclosed herein. The stress sensor includes a plurality of carbon nanotubes in a substrate, and first and second contacts electrically connectable with the plurality of carbon nanotubes. Methods of making and using the stress sensor are also disclosed.
    Type: Application
    Filed: September 19, 2006
    Publication date: March 20, 2008
    Inventors: Mohammad M. Farahani, Vladimir Noveski, Neha M. Patel, Nachiket R. Raravikar
  • Patent number: 6472270
    Abstract: Various methods of manufacturing, including oxide film manufacturing, are provided. In one aspect, a method of fabricating an oxide film is provided that includes forming a trench in a semiconductor substrate and exposing the substrate to an oxidizing atmosphere containing oxygen but substantially no chlorine. The substrate is heated to react a surface of the trench with the oxidizing atmosphere to form the oxide film thereon. Chlorine induced oxide-silicon interface voids may be eliminated.
    Type: Grant
    Filed: March 6, 2001
    Date of Patent: October 29, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Franklin D. Crawford, Jr., Ross Hartshorn, Mohammad M. Farahani