Abstract: The present inventive principles provide a method and system for performing backside voltage contrast on an SOI device. The SOI semiconductor device includes a bulk silicon, a box insulator residing on the bulk silicon and a silicon region on the box insulator. The SOI semiconductor device further includes a plurality of structures in the silicon region, the plurality of structures includes a conductive structure. The method and system include mechanical dimpling and chemical etching of the substrate to expose the box insulator. Optionally, a second chemical etch to remove at least a portion of the box insulator may be performed. A charged particle beam, such as energetic electrons from an SEM, for example, may be directed at the backside of the device, and emitted secondary electrons observed.