Abstract: To obtain an imaging device that can improve temperature detection accuracy. An imaging device of the present disclosure includes a processing unit formed on a first semiconductor substrate and capable of performing predetermined image processing on the basis of image data obtained by an imaging unit, a temperature sensor formed on the first semiconductor substrate and capable of generating a detection signal according to a temperature, and a first pad electrode formed on the first semiconductor substrate and electrically insulated from a circuit formed on the first semiconductor substrate.

Abstract: An imaging device includes an imaging unit configured to generate image data on the basis of a first power voltage; an image processing unit configured to perform image processing on the image data on the basis of a second power voltage; a reference voltage generating unit configured to generate a first reference voltage on the basis of the first power voltage; and a first flag generating unit configured to generate a first flag signal for the second power voltage on the basis of a comparison of the second power voltage and the first reference voltage and configured to output the first flag signal.

Abstract: An imaging device according to the present disclosure includes: a plurality of pixels each including a first light-receiving element and a second light-receiving element, the plurality of pixels including a first pixel; a generating section that is able to generate a first detection value on a basis of a light-receiving result by the first light-receiving element of each of the plurality of pixels, and is able to generate a second detection value on a basis of a light-receiving result by the second light-receiving element of each of the plurality of pixels; and a diagnosis section that is able to perform a diagnosis processing on a basis of a detection ratio that is a ratio between the first detection value and the second detection value in the first pixel.