Patents by Inventor Mohammad R. Rakhshandehroo

Mohammad R. Rakhshandehroo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CF4+H2O plasma ashing for reduction of contact/via resistance
    Patent number: 6794298
    Abstract: The degradation of deposited low dielectric constant interlayer dielectrics and gap fill layers, such as HSQ layers, during formation of contacts/vias is significantly reduced or prevented by employing a plasma containing CF4+H2O to remove the photoresist mask and cleaning the contact/via opening after anisotropic etching. The CF4+H2O plasma also enables rapid photoresist stripping at a rate of about 10 to about 20 KÅ/min. Embodiments include photoresist stripping and cleaning the contact/via opening with a CF4+H2O plasma to prevent reduction of the number of Si—H bonds of an as-deposited HSQ layer below about 70%.
    Type: Grant
    Filed: February 4, 2000
    Date of Patent: September 21, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Jeffrey A. Shields, Lu You, Mohammad R. Rakhshandehroo
  • Water vapor plasma for effective low-k dielectric resist stripping
    Patent number: 6492257
    Abstract: The degradation of deposited low dielectric constant interlayer dielectrics and gap fill layers, such as HSQ layers, during formation of contacts/vias is significantly reduced or prevented by employing a water vapor plasma to remove the photoresist mask. The use of a water vapor also enables rapid photoresist stripping at a rate of about 10 to about 20 KÅ/min. Embodiments include photoresist stripping with a water vapor plasma to prevent reduction of the number of Si—H bonds of an as-deposited HSQ layer below about 70%.
    Type: Grant
    Filed: February 4, 2000
    Date of Patent: December 10, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Jeffrey A. Shields, Lu You, Mohammad R. Rakhshandehroo
  • Plasma treatment for polymer removal after via etch
    Patent number: 6431182
    Abstract: A method and article of manufacture of a via in a semiconductor layered device. The method can include applying an OH/H containing plasma, such as H2O or O2 or a forming gas, to a via which has been etched in a layer of the device. A mixture of oxygen and fluorine-based plasma is applied to complete cleaning of the via to provide a clean via with very little loss of dimensional and surface quality. In another aspect the OH/H containing plasma and the oxygen and fluorine-based plasma are applied together to clean the via.
    Type: Grant
    Filed: October 27, 1999
    Date of Patent: August 13, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Mohammad R. Rakhshandehroo, Mark S. Chang, Angela T. Hui
  • CF4+H20 Plasma ashing for reduction of contact/via resistance
    Publication number: 20010036740
    Abstract: The degradation of deposited low dielectric constant interlayer dielectrics and gap fill layers, such as HSQ layers, during formation of contacts/vias is significantly reduced or prevented by employing a plasma containing CF4+H2O to remove the photoresist mask and cleaning the contact/via opening after anisotropic etching. The CF4+H2O plasma also enables rapid photoresist stripping at a rate of about 10 to about 20 KÅ/min. Embodiments include photoresist stripping and cleaning the contact/via opening with a CF4+H2O plasma to prevent reduction of the number of Si—H bonds of an as-deposited HSQ layer below about 70%.
    Type: Application
    Filed: February 4, 2000
    Publication date: November 1, 2001
    Inventors: Jeffrey A Shields, Lu You, Mohammad R Rakhshandehroo