Abstract: The rectifier sub-assembly, formed by high temperature brazing, is glass encapsulated. It has axially extending leads with enlarged head portions. The sub-assembly is prepared for surface mounting by first flattening the leads outwardly from the enlarged head portions. An electrically insulating, heat conductive epoxy body is molded around the capsule, the enlarged head portions and at least a portion of each of the flattened lead sections. The leads are trimmed and if required, bent into the appropriate shape. After forming, the leads are barrel plated to obtain the best solderable surface for the most reliable electrical connection.

Abstract: The invention is a packaged diode suitable for operation at temperatures above 200.degree. C. and during temperature excursions between -65.degree. C. and at least 350.degree. C. The invention comprises a diode having respective p-n portions with a p-n junction therebetween, and formed of a semiconductor material that is stable and will exhibit satisfactory diode characteristics at such temperatures. Ohmic contacts are made to the opposite sides of the junction diode and to the respective p and n portions of the diode. An electrode adjacent each of the ohmic contacts is formed of an electrically conductive material that has a coefficient of thermal expansion similar to the coefficient of thermal expansion of the semiconductor material for providing structural support to the junction diode and electrical contact therewith. A lead contacts each of the electrodes opposite each electrode's contact with the diode.

Abstract: A mechanical and electrical bond between a silicon semiconductor wafer and a molybdenum contact is created by a multi-layer brazing material. The material includes adjacent layers of titanium and silver along with a layer which is either composed of aluminum or an aluminum-silicon composite. The material is heated to a temperature above its melting point. The aluminum reacts first with the silver, thereby dissolving less of the silicon. This reduces spiking and lowers the contact resistance.