Patents by Inventor Mohammad TAHA

Mohammad TAHA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250132590
    Abstract: Aspects of the disclosure may relate to a system and method for increasing the cost savings and/or reducing amount of money spent by a client based on the charging and discharging of energy storage device(s) using a two-tier process. The first tier may include finding a storage operational mode or policy by optimizing an objective function, according to which the battery of the energy storage device(s) may be managed in a given timestep (e.g., the next 5 minutes). The second tier may include controlling the charging or discharging of the battery according to the previously determined policy.
    Type: Application
    Filed: October 16, 2024
    Publication date: April 24, 2025
    Inventors: Avishai Shaton, Yonatan Weissler, Tihomir Kojuharski, Mohammad Taha, Shai Sabag
  • Patent number: 11072855
    Abstract: Method for fabricating a crystalline vanadium oxide (VO2) film comprising the steps of: a) depositing an amorphous VO2 film on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O2), and the substrate has a temperature of less than about 50° C.; and b) annealing the deposited amorphous VO2 film to crystallise the amorphous VO2 film into a crystalline VO2 film that exhibits an insulator-metal transition. The disclosed method for fabricating a crystalline VO2 film may be suitable for a broad range of substrates.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: July 27, 2021
    Assignee: ROYAL MELBOURNE INSTITUTE OF TECHNOLOGY
    Inventors: Mohammad Taha, Sumeet Walia, Sharath Sriram, Madhu Bhaskaran
  • Publication number: 20190040526
    Abstract: Method for fabricating a crystalline vanadium oxide (VO2) film comprising the steps of: a) depositing an amorphous VO2 film on a substrate by pulsed DC magnetron sputtering using a vanadium target, wherein the substrate is exposed to a sputtering gas comprising an inert process gas and oxygen (O2), and the substrate has a temperature of less than about 50° C.; and b) annealing the deposited amorphous VO2 film to crystallise the amorphous VO2 film into a crystalline VO2 film that exhibits an insulator-metal transition. The disclosed method for fabricating a crystalline VO2 film may be suitable for a broad range of substrates.
    Type: Application
    Filed: August 4, 2017
    Publication date: February 7, 2019
    Inventors: Mohammad TAHA, Sumeet WALIA, Sharath SRIRAM, Madhu BHASKARAN