Abstract: A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO2, 5-35 mole % or 0.1-35 mole % B2O3, 0.1-10 mole % or 0.1-25 mole % Al2O3, 0.1-10 mole % K2O, 0.1-10 mole % Na2O, 0.1-20 mole % Li2O, 0.1-30 mole % F. The total amount of Li2O+Na2O+K2O is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.

Abstract: A slurry composition for use in chemical-mechanical polishing sapphire substrates and includes an alkaline pH adjuster and an accelerant.

Abstract: A low K value, high Q value, low firing dielectric material and method of forming a fired dielectric material. The dielectric material can be fired below 950° C. or below 1100° C., has a K value of less than about 8 at 10-30 GHz and a Q value of greater than 500 or greater than 1000 at 10-30 GHz. The dielectric material includes, before firing a solids portion including 10-95 wt % or 10-99 wt % silica powder and 5-90 wt % or 1-90 wt % glass component. The glass component includes 50-90 mole % SiO2, 5-35 mole % or 0.1-35 mole % B2O3, 0.1-10 mole % or 0.1-25 mole % Al2O3, 0.1-10 mole % K2O, 0.1-10 mole % Na2O, 0.1-20 mole % Li2O, 0.1-30 mole % F. The total amount of Li2O+Na2O+K2O is 0.1-30 mole % of the glass component. The silica powder can be amorphous or crystalline.

Abstract: A slurry composition for use in chemical-mechanical polishing sapphire substrates and includes an alkaline pH adjuster and an accelerant.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a strontium zirconate matrix doped with other metal oxides such as TiO2, MgO, B2O3, CaO, Al2O3, SiO2, and SrO in various combinations.

Abstract: Multilayer ceramic chip capacitors which satisfy Y5V requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise BaTiO3 doped with other metal oxides such as MgO, CaO, ZnO, MnO2, ZrO2, SiO2, Nd2O3, Nb2O5, and Y2O3.

Abstract: Multilayer ceramic chip capacitors which satisfy COG requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as copper and copper alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a composite oxide formed by calcining rare earth titanates, barium titanate, together with other metal oxides such as MgO, CaO, ZnO, MnO2, ZrO2, SiO2, Ga2O3, Nd2O3, Nb2O5, and Y2O3.