Abstract: Gate-all-around integrated circuit structures having nanoribbon sub-fin isolation by backside Si substrate removal etch selective to source and drain epitaxy, are described. For example, an integrated circuit structure includes a plurality of horizontal nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of horizontal nanowires. The epitaxial growth occurs inside a mold confinement, and due the mold, the lateral wingspan of the wingspan of the epitaxial growth is limited. Also the mold causes the epitaxial source or drain structures to exhibit substantially vertical opposing sidewalls and a top surface having a generally mushroom shape over a top of a dielectric layer.

Abstract: A speaker system includes a speaker, a processor, and an active noise cancellation (ANC) circuit communicatively coupled with the processor. The ANC is configured to apply ANC on audio signals from outside the speaker system to generate a modified audio signal stream through the speaker. The application of ANC is to include generation of ANC signals to interfere with at least part of the audio signals from outside the speaker system in the modified audio signal stream. The processor is configured to determine of low-frequency energy at the speaker system, the low-frequency energy below a threshold frequency. The ANC circuit is configured to, based on the determination of low-frequency energy at the speaker system, perform a corrective action on application of ANC to the audio signals from outside the speaker system.

Abstract: A speaker system includes a speaker, a processor, and an active noise cancellation (ANC) circuit communicatively coupled with the processor. The ANC is configured to apply ANC on audio signals from outside the speaker system to generate a modified audio signal stream through the speaker. The application of ANC is to include generation of ANC signals to interfere with at least part of the audio signals from outside the speaker system in the modified audio signal stream. The processor is configured to determine of low-frequency energy at the speaker system, the low-frequency energy below a threshold frequency. The ANC circuit is configured to, based on the determination of low-frequency energy at the speaker system, perform a corrective action on application of ANC to the audio signals from outside the speaker system.

Abstract: Gate-all-around integrated circuit structures having nanoribbon sub-fin isolation by backside Si substrate removal etch selective to source and drain epitaxy, are described. For example, an integrated circuit structure includes a plurality of horizontal nanowires above a sub-fin. A gate stack is over the plurality of nanowires and the sub-fin. Epitaxial source or drain structures are on opposite ends of the plurality of horizontal nanowires. The epitaxial growth occurs inside a mold confinement, and due the mold, the lateral wingspan of the wingspan of the epitaxial growth is limited. Also the mold causes the epitaxial source or drain structures to exhibit substantially vertical opposing sidewalls and a top surface having a generally mushroom shape over a top of a dielectric layer.

Abstract: An interchangeable mixing element for a static mixer includes a mount portion arranged for fixation to an exterior of a manifold body and an insert portion extending from the mount portion. The mount portion is arranged for support within a mixing element seat of the manifold body by the mount portion. The insert portion defines a mixing chamber having an inlet, an outlet opposite the inlet, and a tortuous path fluidly coupling the outlet to the inlet to intermix a first fluid flow and a second fluid received at the inlet of the mixing element into an intermixed fluid flow issued from the outlet of the mixing element. Static mixers and methods of making static mixers are also described.