Patents by Inventor Mohammed I. Alhussani

Mohammed I. Alhussani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Dust repellant and anti-reflective inorganic coating and method for preparing the same
    Patent number: 10894888
    Abstract: The invention provides a dust repellant and anti-reflective inorganic coating and the method for preparing the coating. The dust repellant and anti-reflective inorganic coating includes nano-porous silica (SiO2) network of about 5 nm to about 35 nm and is characterized by cracks. The method of preparing the dust repellant and anti-reflective inorganic coating on a substrate includes mixing of aqueous SiO2 solution with a solvent. The aqueous SiO2 solution with the solvent is stirred to form a solution. The solution is coated on the substrate to form a film on the surface of the substrate. Thereafter, the film is annealed by heating the film to a temperature of about 500° C. to about 700° C. within a period of about 2 minutes to about 2 hours. Finally, the film is allowed to cool down.
    Type: Grant
    Filed: December 1, 2015
    Date of Patent: January 19, 2021
    Assignees: KING ABDULAZIZ CITY FOR SCIENCE AND TECHNOLOGY, FRAUNHOFER INSTITUTE FOR SILICATE RESEARCH ISC
    Inventors: Mohammed Abdullah Bahattab, Walther Glaubitt, Mark Mirza, Mohammed I Alhussani
  • DUST REPELLANT AND ANTI-REFLECTIVE INORGANIC COATING AND METHOD FOR PREPARING THE SAME
    Publication number: 20170152387
    Abstract: The invention provides a dust repellant and anti-reflective inorganic coating and the method for preparing the coating. The dust repellant and anti-reflective inorganic coating includes nano-porous silica (SiO2) network of about 5 nm to about 35 nm and is characterized by cracks. The method of preparing the dust repellant and anti-reflective inorganic coating on a substrate includes mixing of aqueous SiO2 solution with a solvent. The aqueous SiO2 solution with the solvent is stirred to form a solution. The solution is coated on the substrate to form a film on the surface of the substrate. Thereafter, the film is annealed by heating the film to a temperature of about 500° C. to about 700° C. within a period of about 2 minutes to about 2 hours. Finally, the film is allowed to cool down.
    Type: Application
    Filed: December 1, 2015
    Publication date: June 1, 2017
    Applicants: King Abdulaziz City for Science and Technology, Fraunhofer Institute for Silicate Research ISC
    Inventors: Mohammed Abdullah Bahattab, Walther Glaubitt, Mark Mirza, Mohammed I. Alhussani