Patents by Inventor Mohammed Quddus

Mohammed Quddus has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • HIGH VOLTAGE SENSOR DEVICE
    Publication number: 20080042242
    Abstract: In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element.
    Type: Application
    Filed: October 26, 2007
    Publication date: February 21, 2008
    Inventors: Jefferson Hall, Mohammed Quddus
  • Semiconductor structure with improved on resistance and breakdown voltage performance
    Patent number: 7276766
    Abstract: A lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches bounding in part a multiplicity of striped doped regions having opposite or alternating conductivity types.
    Type: Grant
    Filed: August 1, 2005
    Date of Patent: October 2, 2007
    Assignee: Semiconductor Components Industries, L.L.C.
    Inventors: Shanghui Larry Tu, James Adams, Mohammed Quddus, Rajesh S. Nair
  • Semiconductor structure with improved on resistance and breakdown voltage performance
    Publication number: 20070023827
    Abstract: In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches bounding in part a multiplicity of striped doped regions having opposite or alternating conductivity types.
    Type: Application
    Filed: August 1, 2005
    Publication date: February 1, 2007
    Inventors: Shanghui Larry Tu, James Adams, Mohammed Quddus, Rajesh Nair
  • High voltage sensor device and method therefor
    Publication number: 20060163691
    Abstract: In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element.
    Type: Application
    Filed: January 25, 2005
    Publication date: July 27, 2006
    Inventors: Jefferson Hall, Mohammed Quddus
  • High voltage lateral FET structure with improved on resistance performance
    Publication number: 20050218431
    Abstract: In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The body of semiconductor material includes alternating layers of opposite conductivity type that extend between a trench drain region and a trench gate structure. The trench gate structure controls at least one sub-surface channel region. The body of semiconductor material provides sub-surface drift regions to reduce on resistance without increasing device area.
    Type: Application
    Filed: March 11, 2004
    Publication date: October 6, 2005
    Inventors: Rajesh Nair, Shanghui Tu, Zia Hossain, Mohammed Quddus