Patents by Inventor Mohammed Saad Shaarawi

Mohammed Saad Shaarawi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10232613
    Abstract: In one example, a liquid ejection device. The device includes a first metal layer over a substrate, a dielectric layer over the first metal layer, and an orifice through the dielectric layer to the first metal layer. The device also includes a second metal layer over the dielectric layer and partially filling the orifice to form a via to electrical connect the two metal layers. The via has a depth-to-width ratio of at least 0.4. The device further includes a passivation stack covering the second metal layer including all interior surfaces of the via. The stack includes an ALD-deposited layer formed by atomic layer deposition.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: March 19, 2019
    Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Zhizhang Chen, Mohammed Saad Shaarawi, Roberto A Pugliese, Jr.
  • Publication number: 20190039300
    Abstract: In one example, an additive manufacturing system. The system includes a blade spanning at least a portion of a build bed along a y axis and movable across the build bed along an x axis orthogonal to the y axis. The blade includes blade material to spread build material on the build bed. The system further includes a blade positioning mechanism coupled to the blade to position a different portion of the blade material adjacent a given y position of the build bed.
    Type: Application
    Filed: January 27, 2017
    Publication date: February 7, 2019
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: James Charles MCKINNELL, Mohammed Saad SHAARAWI, David Alan CHAMPION
  • Publication number: 20170368823
    Abstract: In one example, a liquid ejection device. The device includes a first metal layer over a substrate, a dielectric layer over the first metal layer, and an orifice through the dielectric layer to the first metal layer. The device also includes a second metal layer over the dielectric layer and partially filling the orifice to form a via to electrical connect the two metal layers. The via has a depth-to-width ratio of at least 0.4. The device further includes a passivation stack covering the second metal layer including all interior surfaces of the via. The stack includes an ALD-deposited layer formed by atomic layer deposition.
    Type: Application
    Filed: January 30, 2015
    Publication date: December 28, 2017
    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
    Inventors: Zhizhang Chen, Mohammed Saad Shaarawi, Roberto A Pugliese, Jr.