Patents by Inventor Mohammed Suhail

Mohammed Suhail has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation
    Patent number: 7955877
    Abstract: Testing a non volatile memory by exposing the non volatile memory to particle radiation (e.g. xenon ions) to emulate memory cell damage due to data state changing events of a non volatile memory cell. After the exposing, the memory cells are subjected to tests and the results of the tests are used to develop reliability indications of the non volatile memory. Integrated circuits with non volatile memories of the same design are provided. Reliability representations of the integrated circuits can be made with respect to a number of data state charging events based on the exposure and subsequent tests.
    Type: Grant
    Filed: March 17, 2009
    Date of Patent: June 7, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Mohammed Suhail, Ko-Min Chang, Peter J. Kuhn, Erwin J. Prinz
  • METHOD FOR PROVIDING A NON-VOLATILE MEMORY
    Publication number: 20100240156
    Abstract: Testing a non volatile memory by exposing the non volatile memory to particle radiation (e.g. xenon ions) to emulate memory cell damage due to data state changing events of a non volatile memory cell. After the exposing, the memory cells are subjected to tests and the results of the tests are used to develop reliability indications of the non volatile memory. Integrated circuits with non volatile memories of the same design are provided. Reliability representations of the integrated circuits can be made with respect to a number of data state charging events based on the exposure and subsequent tests.
    Type: Application
    Filed: March 17, 2009
    Publication date: September 23, 2010
    Inventors: Mohammed Suhail, Ko-Min Chang, Peter J. Kuhn, Erwin J. Prinz
  • Method of programming a non-volatile memory
    Patent number: 7764550
    Abstract: A memory system including non-volatile memory cells. The memory system includes program circuitry that programs cells to a first threshold voltage or a second threshold voltage based on the number of times that cells of the memory system have been erased. In one embodiment, the threshold voltage is reduced when any set of cells of the memory system have been erased a specific number of times.
    Type: Grant
    Filed: November 25, 2008
    Date of Patent: July 27, 2010
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Mohammed Suhail, Frank K. Baker, Jr., Gowrishankar L. Chindalore
  • METHOD OF PROGRAMMING A NON-VOLATILE MEMORY
    Publication number: 20100128537
    Abstract: A memory system including non-volatile memory cells. The memory system includes program circuitry that programs cells to a first threshold voltage or a second threshold voltage based on the number of times that cells of the memory system have been erased. In one embodiment, the threshold voltage is reduced when any set of cells of the memory system have been erased a specific number of times.
    Type: Application
    Filed: November 25, 2008
    Publication date: May 27, 2010
    Inventors: Mohammed Suhail, Frank K. Baker, JR., Gowrishankar L. Chindalore
  • Method and apparatus for programming/erasing a non-volatile memory
    Patent number: 7236402
    Abstract: An integrated circuit (10) having non-volatile memory (NVM) (14) includes a threshold selector (28) which selects a first one of a plurality of read current/voltage thresholds during a first portion of a program/erase cycle, and which selects a second one of a plurality of read current/voltage thresholds during a second portion of said program/erase cycle, wherein the first one of a plurality of read current/voltage thresholds and the second one of a plurality of read current/voltage thresholds are different. The first portion of the program/erase cycle occurs in time before the second portion of the program/erase cycle. The second one of the plurality of read current/voltage thresholds is less than the first one of the plurality of read current/voltage thresholds.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: June 26, 2007
    Assignee: Freescale Semiconductor, Inc.
    Inventor: Mohammed Suhail
  • METHOD AND APPARATUS FOR PROGRAMMING/ERASING A NON-VOLATILE MEMORY
    Publication number: 20070121387
    Abstract: An integrated circuit (10) having non-volatile memory (NVM) (14) includes a threshold selector (28) which selects a first one of a plurality of read current/voltage thresholds during a first portion of a program/erase cycle, and which selects a second one of a plurality of read current/voltage thresholds during a second portion of said program/erase cycle, wherein the first one of a plurality of read current/voltage thresholds and the second one of a plurality of read current/voltage thresholds are different. The first portion of the program/erase cycle occurs in time before the second portion of the program/erase cycle. The second one of the plurality of read current/voltage thresholds is less than the first one of the plurality of read current/voltage thresholds.
    Type: Application
    Filed: November 30, 2005
    Publication date: May 31, 2007
    Inventor: Mohammed Suhail