Abstract: A novel low cost polysilicon production technique for Siemens type reactors is disclosed. In one embodiment, a CVD reactor assembly includes a reactor forming a stainless steel envelope attached to a base plate. The stainless steel envelope is designed to receive a thermal fluid at room temperature and maintain a reactor wall temperature up to 450° C. A steam generator is configured to receive the thermal fluid having a temperature up to 450° C. from the reactor and generate a low pressure steam around 350° C. to 450° C. A low pressure steam turbine/generator is configured to receive the low pressure steam and generate electricity. In another embodiment, the steam generator is configured to receive heat from an external source in addition to the thermal fluid to generate super heated steam. A conventional steam turbine/generator receives the super heated steam and generates electricity.

Abstract: A simplified startup CVD technique for Siemens type of reactors is disclosed. In one embodiment, a method for production of bulk polysilicon in a CVD reactor assembly includes evacuating stainless steel envelope to have substantially low oxygen content, applying radiant heat (e.g., using a heating element coated with silicon) to the stainless steel enclosure sufficient for raising silicon rods to a firing temperature, flowing process gas (H2) ladened with a silicon reactant material via a process gas inlet and outlet port, applying sufficient current using low-voltage power supply until the silicon rods reach a deposition temperature of the process gas and upon the silicon reactant material reaching the firing temperature, turning off the radiant heat upon reaching the firing temperature, flowing gaseous byproducts of the CVD process out through the process gas outlet port, and removing as a bulk polysilicon product from the stainless steel enclosure.

Abstract: A bulk silicon material for making silicon ingots, consisting of silicon pellets, and a method for making the pellets from an agglomerate-free source of high purity silicon powder by feeding a controlled amount of silicon powder that is free of intentional additives and binders into a pellet die, and dry compacting the powder at ambient temperature with pressure to produce a pellet that has a density of about 50–75% of the theoretical density of elemental silicon, a weight within a range of about 1.0 gram to about 3.0 grams and preferably of about 2.3 grams, a diameter in the range of 10 mm to 20 mm and preferably of about 14 mm, and a height in the range of 5 mm to 15 mm and preferably of about 10 mm.

Abstract: This invention describes methods of compacting and densifying high purity silicon powder to defined geometric forms and shapes. High purity silicon powder is first mixed with binder from a select group of binders and pressed into desired shapes in a mechanical equipment. The binder is removed either in a separate step or combined with a subsequent sintering operation. The binders and process conditions are chosen to make negligible change to the purity of the silicon in the end product. When high purity silicon powder is utilized in the process, the end use for the densified silicon compacts is primarily as feedstock for silicon-based photovoltaic manufacturing industries.

Abstract: A method for making ingots, and devices for making ingots are provided. Crucibles are provided that are reusable for forming multicrystalline silicon ingots. Crucibles are provided with features such as multiple components, coefficients of thermal expansion, and coatings that enhance a release of the ingots from the crucibles after cooling. Coatings on crucibles are provided that reduce or eliminate contamination of silicon ingots during formation. Methods of forming composite wafers are provided that produce a low cost wafer without sacrificing performance.

Abstract: An apparatus for the automated measurement and recording of the electrical resistivity of a semiconductor boule or ingot using the method of four probes has a four point boule support grid is provided adjacent to the home position of a four tip probe which is equipped with three axis linear mobility, rotational capability, and computer control, to provide automated mapping and testing of an “as grown” or ground semiconductor boule with cropped ends, for obtaining and recording resistivity data.

Abstract: A method for fabricating multi-cell solar devices using thermal spray deposition techniques to spray metal powder directly on solar cells and on the backing upon which solar cells are assembled, to form collection grid lines, bus bars, electrodes and interconnections between solar cells.

Abstract: A continuous flow, steady state fluid delivery and recovery system for a process chamber and processes requiring supercritical fluid and desired additives including co-solvents, for conducting repetitive batch processing operations in an automated environment, for such processes as supercritical carbon dioxide cleaning and processing of semiconductor wafers. The system provides for steady-state operation of fluid flow and byproducts recovery while the process chamber is brought rapidly and repeatedly on and off line as in batch operations and for various process steps.

Abstract: A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

Abstract: A method for producing formed semiconductor articles with predefined shapes such as core tubes for CVD production of bulk polysilicon. The method is characterized by thermal spray deposition of the semiconductor material in a on a temperature controlled rotating mandrel that is shaped complementarily to the desired article shape, and by later separation of the formed semiconductor body from the mandrel by thermal contraction, melting, or chemical reduction of the mandrel size.

Abstract: In one embodiment, the present invention is a method of coating at least one wafer with silicon nitride. The first step in the method is assembling at least one electrode set, wherein each electrode set includes at least one dielectric barrier between a top electrode and a bottom electrode. The second step is flowing at least one purge gas and at least one reactant at least partially between the electrodes, of at least one electrode set, substantially at atmospheric pressure. The next step in the inventive method is placing a wafer between the electrodes of at least one electrode set, wherein the wafer is substantially encompassed by the flowing gas. The last step in this embodiment of the inventive method is supplying AC power to at least one electrode set thereby causing a dielectric barrier discharge.

Abstract: A pressure vessel for use in production processes requiring elevating and ranging of temperatures and pressures during the process cycle, readily adaptable to production line operation, suitable for wafer processing in the semiconductor industry and for other industries and processes. The pressure vessel is configured within an open support frame with a stationary, preferably inverted, orientation. The cover or closing plate is vertically movable towards the mouth of the pressure vessel and functions as the platform by which the object under process is transferred into the vessel. The moving and locking mechanism for the cover is isolated and shielded from the process environment.

Abstract: An inverted pressure vessel system for conducting automated industrial processes requiring elevated pressure and temperatures has a vertically movable pedestal for opening and closing the underside loading port, with pedestal drive system and locking mechanism located below the pedestal top and isolated from the chamber opening. The chamber is connectible to a pressure control and process fluid supply system, and has heat exchangers connected to an external source for temperature control. Process fluids are distributed across a central process cavity through divergent inflow and convergent outflow process fluid channels.

Abstract: A method for preparing a release coating and applying it to crucibles used to contain molten material while it solidifies, by mixing a release coating power with a dry organic binder into a powder and binder dry mixture, mixing a defoamer with a liquid into a liquid and defoamer mixture, mixing the dry mixture with the liquid and defoamer mixture into a wet release coating, sieving to remove lumps and particles, checking the viscosity, wet-spraying onto a crucible, evaporating the liquid from the wet release coating so as to leave a dry release coating on the crucible, and separating the binder from the dry release coating by thermal decomposition.

Abstract: An apparatus for the automated measurement and recording of the electrical resistivity of a semiconductor boule or ingot using the method of four probes. A four point boule support grid is provided adjacent to the home position of a four tip probe equipped with three axis linear mobility, rotational capability, and computer control, to enable automated mapping and testing of an “as grown” or ground semiconductor boule with cropped ends, for obtaining and recording all necessary resistivity data. The apparatus converts resistivity data to ASTM standards and reads over a wide resistivity range. The apparatus has all data logging capabilities and full computer control interfaces, and adapts readily to a production line setup with automated delivery and removal of boules under test.

Abstract: A thermodynamically stable, protective coating layer is applied by thermal spray technique to the inner and outer surfaces of a quartz crucible used for mono or polycrystalline silicon crystallization processing, inhibiting fusion between the silicon melt and the vitreous silica of the crucible, contamination of the silicon melt by contaminants released from the crucible by devitrification, and any chemical reaction occurring between the crucible and any supporting graphite structure. A powdered form of a suitable protective coating material compatible with high temperature plasma spray techniques, such as magnesium zirconate, barium zirconate, or stabilized zirconium oxide, is fed into a high temperature and high speed plasma jet directed at the crucible. The powder particles are softened or melted in the jet and deposited on the surfaces of the quartz crucible, and allowed to cool and harden into a protective coating.

Abstract: A method for preparing a release coating and applying it to crucibles used to contain molten material while it solidifies, by mixing a release coating power with a dry organic binder into a powder and binder dry mixture, mixing a defoamer with a liquid into a liquid and defoamer mixture, mixing the dry mixture with the liquid and defoamer mixture into a wet release coating, sieving to remove lumps and particles, checking the viscosity, wet-spraying onto a crucible, evaporating the liquid from the wet release coating so as to leave a dry release coating on the crucible, and separating the binder from the dry release coating by thermal decomposition.

Abstract: A method for producing formed semiconductor articles with predefined shapes such as core tubes for CVD production of bulk polysilicon. The method is characterized by thermal spray deposition of the semiconductor material in a on a temperature controlled rotating mandrel that is shaped complementarily to the desired article shape, and by later separation of the formed semiconductor body from the mandrel by thermal contraction, melting, or chemical reduction of the mandrel size.

Abstract: A thermodynamically stable, protective coating layer is applied by thermal spray technique to the inner and outer surfaces of a quartz crucible used for mono or polycrystalline silicon crystallization processing, inhibiting fusion between the silicon melt and the vitreous silica of the crucible, contamination of the silicon melt by contaminants released from the crucible by devitrification, and any chemical reaction occurring between the crucible and any supporting graphite structure. A powdered form of a suitable protective coating material compatible with high temperature plasma spray techniques, such as magnesium zirconate, barium zirconate, or stabilized zirconium oxide, is fed into a high temperature and high speed plasma jet directed at the crucible. The powder particles are softened or melted in the jet and deposited on the surfaces of the quartz crucible, and allowed to cool and harden into a protective coating.

Abstract: A method for preparing a release coating and applying it to crucibles used to contain molten material while it solidifies, such as in the directional solidification of polycrystalline silicon into ingots, by mixing a release coating power with a dry organic binder into a powder and binder dry mixture, mixing a defoamer with a liquid into a liquid and defoamer mixture, mixing the dry mixture with the liquid and defoamer mixture into a wet release coating, sieving to remove lumps and particles, checking the viscosity, wet-spraying onto a crucible at about room temperature, evaporating the liquid from the wet release coating so as to leave a dry release coating on the crucible, and separating the binder from the dry release coating by thermal decomposition.