Abstract: A photovoltaic device according to one embodiment includes an array of photovoltaically active microstructures each having a generally cylindrical outer periphery, each microstructure comprising a first photovoltaic layer over a core, and a second photovoltaic layer over the first photovoltaic layer thereby forming a photovoltaically active junction, wherein an outer conductive layer is positioned over the second photovoltaic layer, wherein an index of refraction of the outer conductive layer is less than an index of refraction of the second photovoltaic layer, wherein the index of refraction of the second photovoltaic layer is less than an index of refraction of the first photovoltaic layer, each of the microstructures being characterized as absorbing at least 70% of light passing an inner surface of an outer layer thereof. Additional embodiments are also presented.

Abstract: A photovoltaic device according to one embodiment includes an array of photovoltaically active microstructures each having a generally cylindrical outer periphery and a dome-shaped tip, each of the microstructures being characterized as absorbing at least 70% of light passing through an outer layer thereof. Additional embodiments are also presented.

Abstract: A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.

Abstract: A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing helium along with the process gas that includes silicon, oxygen and a halogen element. Helium is introduced at an increased rate to stabilize the deposited layer. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film and TEOS is employed as a source of silicon in the process gas. In still another preferred embodiment, SiF.sub.4 is employed as the fluorine source for the FSG film.

Abstract: A method and apparatus for improving film stability of a halogen-doped silicon oxide layer. The method includes the step of introducing a process gas including a first halogen source and a second halogen source, different from the first halogen source, into a deposition chamber along with silicon and oxygen sources. A plasma is then formed from the process gas to deposit a halogen-doped layer over a substrate disposed in the chamber. It is believed that the introduction of the additional halogen source enhances the etching effect of the film. The enhanced etching component of the film deposition improves the film's gap-fill capabilities and helps stabilizes the film. In a preferred embodiment, the halogen-doped film is a fluorosilicate glass film, SiF.sub.4 is employed as the first halogen source, TEOS is employed as a source of silicon and the second halogen source is either F.sub.2 or NF.sub.3.