Abstract: The present invention describes a copolymer comprising multiple unsaturations, which are obtained by polymerization of dimethyl ?-cyclodextrin inclusion complex of monomer containing multiple vinyl unsaturation and amine functional monomer. These water soluble copolymers containing unsaturation sites, crosslinked in the presence of bile acid template. This novel sequential polymerization and crosslinked process enhances the rebinding capacity of the bile acid sequestrant for the bile acid used as the template during crosslinking step and also selectivity over other bile acids, in comparison to the polymers synthesized by the conventional simultaneous polymerization/crosslinking method.

Abstract: A voltage-controlled oscillator design is disclosed that provides greater tuning range than a prior art differential amplifier design using “varactor” diodes. The design employs CMOS capacitors to replace varactor diodes. The CMOS capacitors are formed from PMOS transistors in which the drain of the transistor is electrically connected to the source of the same transistor, so that voltage-dependant capacitors are formed between the gate-to-source terminals and the gate-to-drain terminals of the PMOS transistor. Secondly, the monolithic inductors employed in the prior art are replaced by “active” inductors: the combination of a resistor connected in series with the gate of an NMOS transistor, where the potential at the drain of the NMOS transistor is held below that of the second terminal of the resistor by at least the threshold, or turn-on voltage, of the transistor. The resistor/transistor combination acts inductively at the frequency of oscillation of interest.

Abstract: A voltage-controlled oscillator design is disclosed that provides greater tuning range than a prior art differential amplifier design using “varactor” diodes. The design employs CMOS capacitors to replace varactor diodes. The CMOS capacitors are formed from PMOS transistors in which the drain of the transistor is electrically connected to the source of the same transistor, so that voltage-dependant capacitors are formed between the gate-to-source terminals and the gate-to-drain terminals of the PMOS transistor. Secondly, the monolithic inductors employed in the prior art are replaced by “active” inductors: the combination of a resistor connected in series with the gate of an NMOS transistor, where the potential at the drain of the NMOS transistor is held below that of the second terminal of the resistor by at least the threshhold, or turn-on voltage, of the transistor. The resistor/transistor combination acts inductively at the frequency of oscillation of interest.