Abstract: Disclosed herein are methods for etch barrier deposition that can include depositing a seed layer onto a substrate, depositing a metal layer onto the seed layer in a predetermined pattern, coating the metal layer with a barrier layer, directionally etching the barrier layer from a direction orthogonal to the substrate such that at least a portion of the barrier layer oriented parallel to the direction of the directional etching remains coated on the metal layer, and etching the portion of the seed layer to remove the seed layer from the substrate.

Abstract: Methods of processing a capacitor device with high energy density and high extraction efficiency based on sol-gel films. The films can be formed by use of a single precursor, including siloxane precursors bearing a polar group on a flexible tethering group. The sol-gel compositions used in the formation of films can have high dielectric permittivity, low dielectric loss, high breakdown strength and high-energy storage properties. The methods can be well suited for both high energy density and high power density to provide enhanced energy storage capabilities for discrete, embedded or on-chip integrated capacitor applications, gate dielectrics for transistors and displays, capacitive touch screens, light weight mobile defibrillators, filters for cellular devices, electric propulsion, electric vehicles, power invertors for microgrid storage, load leveling of transients on a wide range of timescales for medium voltage electric grids.

Abstract: A capacitor device with high energy density and high extraction efficiency based on sol-gel films. The films can be formed by use of a single precursor, including siloxane precursors bearing a polar group on a flexible tethering group. The sol-gel compositions used in the formation of films can have high dielectric permittivity, low dielectric loss, high breakdown strength and high-energy storage properties. The forming processing methods described here can be well suited for both high energy density and high power density to provide enhanced energy storage capabilities for discrete, embedded or on-chip integrated capacitor applications, gate dielectrics for transistors and displays, capacitive touch screens, light weight mobile defibrillators, filters for cellular devices, electric propulsion, electric vehicles, power invertors for microgrid storage, load leveling of transients on a wide range of timescales for medium voltage electric grids.

Abstract: Described herein are photo-patternable sol-gel precursors and their methods of preparation. The sol-gel precursors are thermally stable and form compositions that have high refractive indices and low optical loss values. The precursors can be used to make sol-gel compositions that are ideally suited toward optical waveguide applications in the realm of telecommunications wavelengths.

Abstract: Described herein are compositions that are photorefractive upon irradiation by multiple laser wavelengths across the visible light spectrum. Embodiments of the photorefractive composition comprise a polymer, a chromophore, and a sensitizer, wherein the polymer comprises a repeating unit including at least a moiety selected from the group consisting of the formulae (Ia), (Ib) and (Ic), as defined herein. The photorefractive composition can be used in optical devices.

Abstract: Described herein are photo-patternable sol-gel precursors and their methods of preparation. The sol-gel precursors are thermally stable and form compositions that have high refractive indices and low optical loss values. The precursors can be used to make sol-gel compositions that are ideally suited toward optical waveguide applications in the realm of telecommunications wavelengths.

Abstract: Described herein are sol-gel compositions, sol-gel composition precursors, and methods of fabricating photo-patterned structures on a substrate. The sol-gel compositions possess a combination of high refractive index and low optical loss, even without incorporating metal oxides or metal alkoxides. The sol-gel compositions are further useful in waveguide fabrication applications, especially at the telecommunication wavelength range of 1300-1600 nm. Furthermore, the fabrication of patterned structures using the sol-gel compositions described herein can be achieved in a variety of substrates, including, for example, silicon-on-silica substrates and molybdenum-on-glass substrates.

Abstract: An optical device composition of the present invention includes a trifluorovinyl group containing polyimide that is crosslinkable and thermally stable after crosslinking. The invention relates to a polyimide composition which provides either passive or active wave-guide optical capabilities. More particularly since the composition comprises a chromophore which shows non-linear optical ability, the composition can be used for an active wave guide material, such as modulator or switching device compositions. Furthermore, the composition may include a trifluorovinyl containing chromophore and polyimide which comprises non-linear optical ability in the matrix polymer system.

Abstract: An optical device composition of the present invention includes a trifluorovinyl group containing polyimide that is crosslinkable and thermally stable after crosslinking. The invention relates to a polyimide composition which provides either passive or active wave-guide optical capabilities. More particularly since the composition comprises a chromophore which shows non-linear optical ability, the composition can be used for an active wave guide material, such as modulator or switching device compositions. Furthermore, the composition may include a trifluorovinyl containing chromophore and polyimide which comprises non-linear optical ability in the matrix polymer system.