Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: A method for atomic layer etching copper or copper alloy over a substrate in a plasma processing chamber comprising a plurality of cycles is provided. Each cycle of the plurality of cycles comprises a copper modification phase and an activation phase. The copper modification phase comprises flowing a modification gas into the plasma processing chamber, transforming the modification gas into a modification plasma, and exposing the copper or copper alloy to the modification plasma, wherein at least a part of the copper or copper alloy is modified. The activation phase comprises flowing an activation gas into the plasma processing chamber, wherein the activation gas, comprises a hydrogen containing gas, transforming the activation gas into an activation plasma, and exposing the modified copper or copper alloy to the activation plasma, wherein at least a volatile copper or copper alloy complex is formed.

Abstract: Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

Abstract: Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.

Abstract: A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Abstract: A method for selectively etching layers of a first material with respect to layers of a second material in a stack is provided. The layers of the first material are partially etched with respect to the layers of the second material. A deposition layer is selectively deposited on the stack, wherein portions of the deposition layer covering the layers of the second material are thicker than portions covering the layers of the first material, the selective depositing comprising providing a first reactant, purging some of the first reactant, wherein some undeposited first reactant is not purged, and providing a second reactant, wherein the undeposited first reactant combines with the second reactant and selectively deposits on the layers of the second material with respect to the layers of the first material. The layers of the first material are selectively etched with respect to the layers of the second material.

Abstract: Etching a refractory metal or other high surface binding energy material on a substrate can maintain or increase the smoothness of the metal/high EO surface, in some cases produce extreme smoothing. A substrate having an exposed refractory metal/high EO surface is provided. The refractory metal/high EO surface is exposed to a modification gas to modify the surface and form a modified refractory metal/high EO surface. The modified refractory metal/high EO surface is exposed to an energetic particle to preferentially remove the modified refractory metal/high EO surface relative to an underlying unmodified refractory metal/high EO surface such that the exposed refractory metal/high EO surface after removing the modified refractory metal/high EO surface is as smooth or smoother than the substrate surface before exposing the substrate surface to the modification gas.