Abstract: A surgical apparatus. The apparatus includes a handle structure, a shaft structure coupled to the handle structure, and a spreading structure coupled to the shaft structure and movable between a compact and an expanded configuration. The apparatus includes a protective sheath of shape-recovery material. The protective sheath covers the entire spreading structure in a substantially form fitting manner in any configuration of the spreading structure including the compact configuration, the expanded configuration and any configurations therebetween.

Abstract: A surgical apparatus. The apparatus includes a handle structure, a shaft structure coupled to the handle structure, and a spreading structure coupled to the shaft structure and movable between a compact and an expanded configuration. The apparatus includes a protective sheath of shape-recovery material. The protective sheath covers the entire spreading structure in a substantially form fitting manner in any configuration of the spreading structure including the compact configuration, the expanded configuration and any configurations therebetween.

Abstract: A repair system including a closure prosthesis and deployment device, and associated methods for repairing any imperfection including a flaw, hole, tear, bulge, or, in some cases, a deliberate cut or incision in any tissue including an intervertebral disc is disclosed. The prosthesis has first and second side portions with a connecting central portion, and is designed to span an imperfection with opposite ends positioned on opposite sides of the imperfection or the same side of the imperfection. The prosthesis may include anchoring features including barbs and/or members that extend transversely or at different angles. The deployment device can include a cannula for positioning the prosthesis near the imperfection, and, in some cases, a mechanism that may cause the two sides of the prosthesis to be deployed in a specific order.

Abstract: A repair system including a closure prosthesis and deployment device, and associated methods for repairing any imperfection including a flaw, hole, tear, bulge, or, in some cases, a deliberate cut or incision in any tissue including an intervertebral disc. The prosthesis has first and second side portions with a connecting central portion, and is designed to span an imperfection with opposite ends positioned on opposite sides of the imperfection. The prosthesis may include anchoring features including barbs and/or members that extend transversely. The deployment device can include a canula for positioning the prosthesis near the imperfection, and, in some cases, a mechanism that may cause the two sides of the prosthesis to be deployed in a specific order.

Abstract: A repair system including a closure prosthesis and deployment device, and associated methods for repairing any imperfection including a flaw, hole, tear, bulge, or, in some cases, a deliberate cut or incision in any tissue including an intervertebral disc. The prosthesis has first and second side portions with a connecting central portion, and is designed to span an imperfection with opposite ends positioned on opposite sides of the imperfection. The prosthesis may include anchoring features including barbs and/or members that extend transversely. The deployment device can include a canula for positioning the prosthesis near the imperfection, and, in some cases, a mechanism that may cause the two sides of the prosthesis to be deployed in a specific order.

Abstract: A Novel surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to a novel apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.

Abstract: A novel surgical apparatus for use in orthopedic surgery procedures and a method for use is provided. The present invention includes a protective sheath which prevents fouling of the moving parts of the device by unwanted contact with surround tissue and bone. The device relates primarily to the treatment of traumatic, pathogenic, or osteoporotic bone conditions of human and other animal body systems and, more particularly, to a novel apparatus and method for manipulating the vertebral body through a less invasive, percutaneous, surgical approach.

Abstract: A Novel surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to a novel apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.

Abstract: A novel surgical apparatus for use in orthopedic surgery procedures and a method for use is provided. The present invention relates primarily to the treatment of traumatic, pathogenic, or osteoporotic bone conditions of human and other animal body systems and, more particularly, to a novel apparatus and method for manipulating the vertebral body through a less invasive, percutaneous, surgical approach.

Abstract: A Novel surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to a novel apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.

Abstract: A surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to an apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.

Abstract: A Novel surgical apparatus and method of use in osteoplasty and other methods of injecting materials into a subject for medical purposes. The present invention particularly relates to the surgical treatment of traumatic, pathogenic, or osteoporotic bone conditions of the human and other animal body systems and more particularly, to a novel apparatus and method for injection of a material into a lesion of a vertebral body or other bony structure.

Abstract: A silicon carbide transistor (10) is formed from a silicon carbide film (14) that is formed on a silicon carbide substrate bulk (37). A conductor pattern layer (25) is formed on the silicon carbide film (14) and the silicon carbide film (14) removed from the silicon carbide substrate bulk (37) and attached to a substrate (11) of a dissimilar semiconductor material.

Abstract: A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region and an implant region positioned in the doped region adjacent the surface and in communication with the source and buried region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an inversion region in the implant region extending laterally adjacent the control terminal and communicating with the drift region and the source.

Abstract: A high breakdown voltage HFET includes a reduced surface field (RESURF) layer of p-type conductivity GaN positioned on a substrate with a channel layer of n-type conductivity GaN positioned thereon. A barrier layer of n-type conductivity Al.sub.x Ga.sub.1-x N is positioned on the channel layer to form a lateral channel adjacent to and parallel with the interface. A gate electrode is positioned on the barrier layer overlying the lateral channel and a drain electrode is positioned on the channel layer in contact with the lateral channel and spaced to one side of the gate electrode a distance which determines the breakdown voltage. A source electrode is positioned on the channel layer to the opposite side of the gate electrode, in contact with the lateral channel and also in contact with the RESURF layer.

Abstract: A method of fabricating an integrated VFET and Schottky diode including forming a source region on the upper surface of a substrate so as to define a channel. First and second spaced apart gates are formed on opposing sides of the source region so as to abut the channel, thereby forming a channel structure. Schottky metal is positioned on the upper surface of the substrate proximate the channel structure to define a Schottky diode region and form a Schottky diode. A source contact is formed in communication with the source region and the Schottky metal, and a drain contact is formed on the lower surface of the substrate.

Abstract: A method of fabricating a semiconductor device on thinned wide bandgap material including providing a support having a planar surface and a semiconductor substrate. Implanting a layer of ions in the substrate to create a layer of microbubbles defining a thin film having a planar surface and a remaining mass separated by the layer of implanted ions. Intimately contacting the planar surface of the thin film to the planar surface of the support and heating the support and substrate to separate the remaining mass from the thin film. A semiconductor device is formed on the thin film, and the support is thinned.

Abstract: AN IGBT including a collector positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. An emitter positioned on the doped structure in communication with the doped region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define a conduction channel extending laterally adjacent the control terminal and communicating with the drift region and the emitter. The substrate and buried region are the same conductivity and opposite the doped region to form a bipolar transistor therebetween.

Abstract: A lateral gate, vertical drift region transistor including a drain positioned on one surface of a substrate and a doped structure having a buried region therein positioned on the other surface of the substrate. The buried region defining a drift region in the doped structure extending vertically from the substrate and further defining a doped region in communication with the drift region and adjacent the surface of the doped structure. A source positioned on the doped structure in communication with the doped region and an implant region positioned in the doped region adjacent the surface and in communication with the source and buried region. An insulating layer positioned on the doped structure with a metal gate positioned on the insulating layer so as to define an inversion region in the implant region extending laterally adjacent the control terminal and communicating with the drift region and the source.

Abstract: Fabricating a device including a Schottky diode by growing a dielectric film on a SiC substrate structure and forming an ohmic contact on the opposite surface of the substrate structure by depositing a layer of metal and annealing at a temperature above 900.degree. C. Implanting doping material in the substrate structure through spaced apart openings to form high resistivity areas and depositing a dielectric layer on the dielectric film to define a contact opening positioned between the spaced apart high resistivity areas. Annealing the implant at a temperature less than approximately 400.degree. C. to reduce reverse leakage current and depositing metal in the contact opening to form a Schottky contact.