Patents by Inventor Mohith E. Verghese

Mohith E. Verghese has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10556799
    Abstract: Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: February 11, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Eric J. Shero, Mohith E. Verghese
  • Patent number: 10480072
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: November 19, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Eric James Shero, Mohith E. Verghese, Carl Louis White, Herbert Terhorst, Dan Maurice
  • Publication number: 20180339907
    Abstract: Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.
    Type: Application
    Filed: July 30, 2018
    Publication date: November 29, 2018
    Inventors: Eric J. Shero, Mohith E. Verghese
  • Patent number: 10118828
    Abstract: Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.
    Type: Grant
    Filed: August 17, 2016
    Date of Patent: November 6, 2018
    Assignee: ASM IP HOLDING B.V.
    Inventors: Eric J. Shero, Mohith E. Verghese
  • Publication number: 20170096345
    Abstract: Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.
    Type: Application
    Filed: August 17, 2016
    Publication date: April 6, 2017
    Inventors: Eric J. Shero, Mohith E. Verghese
  • Patent number: 9593416
    Abstract: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
    Type: Grant
    Filed: February 24, 2012
    Date of Patent: March 14, 2017
    Assignee: ASM AMERICA, INC.
    Inventors: Kyle Fondurulia, Eric Shero, Mohith E. Verghese, Carl L. White
  • Publication number: 20160289828
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
    Type: Application
    Filed: June 14, 2016
    Publication date: October 6, 2016
    Inventors: Eric James Shero, Mohith E. Verghese, Carl Louis White, Herbert Terhorst, Dan Mourice
  • Patent number: 9394608
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
    Type: Grant
    Filed: April 5, 2010
    Date of Patent: July 19, 2016
    Assignee: ASM America, Inc.
    Inventors: Eric Shero, Mohith E. Verghese, Carl L. White, Herbert Terhorst, Dan Maurice
  • Patent number: 8986456
    Abstract: A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.
    Type: Grant
    Filed: April 19, 2010
    Date of Patent: March 24, 2015
    Assignee: ASM America, Inc.
    Inventors: Kyle Fondurulia, Eric Shero, Mohith E. Verghese, Carl L. White
  • Publication number: 20120156108
    Abstract: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
    Type: Application
    Filed: February 24, 2012
    Publication date: June 21, 2012
    Applicant: ASM AMERICA, INC.
    Inventors: KYLE FONDURULIA, Eric Shero, Mohith E. Verghese, Carl L. White
  • Patent number: 8137462
    Abstract: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: March 20, 2012
    Assignee: ASM America, Inc.
    Inventors: Kyle Fondurulia, Eric Shero, Mohith E Verghese, Carl L White
  • Publication number: 20100322604
    Abstract: A precursor source vessel for providing vaporized precursor to a reaction chamber is provided. The precursor source vessel includes a lid having a first port, a second port, and a third port. The precursor source vessel also includes a base removably attached to the lid. The base includes a recessed region formed therein. One of the first, second, and third ports is a burp port configured to relieve the head pressure within the source vessel after the source vessel is installed but prior to use of the source vessel in semiconductor processing.
    Type: Application
    Filed: April 19, 2010
    Publication date: December 23, 2010
    Inventors: Kyle Fondurulia, Eric Shero, Mohith E. Verghese, Carl L. White
  • Publication number: 20100307415
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber. The reaction chamber defines a reaction space in which a semiconductor substrate is disposed for processing.
    Type: Application
    Filed: April 5, 2010
    Publication date: December 9, 2010
    Inventors: Eric Shero, Mohith E. Verghese, Carl L. White, Herbert Terhorst, Dan Maurice
  • Publication number: 20080085226
    Abstract: A precursor source vessel comprises a vessel body, a passage within the vessel body, and a valve attached to a surface of the body. An internal chamber is adapted to contain a chemical reactant, and the passage extends from outside the body to the chamber. The valve regulates flow through the passage. The vessel has inlet and outlet valves, and optionally a vent valve for venting internal gas. An external gas panel can include at least one valve fluidly interposed between the outlet valve and a substrate reaction chamber. Gas panel valves can each be positioned along a plane that is generally parallel to, and no more than about 10.0 cm from, a flat surface of the vessel. Filters in a vessel lid or wall filter gas flow through the vessel's valves. A quick-connection assembly allows fast and easy connection of the vessel to a gas panel.
    Type: Application
    Filed: October 10, 2007
    Publication date: April 10, 2008
    Applicant: ASM AMERICA, INC.
    Inventors: Kyle Fondurulia, Eric Shero, Mohith E. Verghese, Carl L. White
  • Patent number: 7020981
    Abstract: A reactor defines a reaction chamber for processing a substrate. The reactor comprises a first inlet for providing a first reactant and to the reaction chamber and a second inlet for a second reactant to the reaction chamber. A first exhaust outlet removes gases from the reaction chamber. A second exhaust outlet removes gases from the reaction chamber. A flow control system is configured to alternately constrict flow through the first and second exhaust outlets. The reactor chamber is configured to for a diffusion barrier within the reaction chamber.
    Type: Grant
    Filed: October 29, 2004
    Date of Patent: April 4, 2006
    Assignee: ASM America, INC
    Inventors: Eric J. Shero, Mohith E. Verghese