Patents by Inventor Mohommad Choudhuri

Mohommad Choudhuri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of integrating a copper plating process in a through-substrate-via (TSV) on CMOS wafer
    Patent number: 10347564
    Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.
    Type: Grant
    Filed: June 7, 2017
    Date of Patent: July 9, 2019
    Assignee: NXP USA, Inc.
    Inventors: Matthieu Lagouge, Qing Zhang, Mohommad Choudhuri, Gul Zeb
  • Integrated capacitive humidity sensor
    Patent number: 10336606
    Abstract: A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.
    Type: Grant
    Filed: February 25, 2016
    Date of Patent: July 2, 2019
    Assignee: NXP USA, Inc.
    Inventors: Qing Zhang, Mohommad Choudhuri, Gul Zeb
  • METHOD OF INTEGRATING A COPPER PLATING PROCESS IN A THROUGH-SUBSTRATE-VIA (TSV) ON CMOS WAFER
    Publication number: 20180019187
    Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.
    Type: Application
    Filed: June 7, 2017
    Publication date: January 18, 2018
    Inventors: Matthieu Lagouge, Qing Zhang, Mohommad Choudhuri, Gul Zeb
  • Integrated Capacitive Humidity Sensor
    Publication number: 20170247247
    Abstract: A semiconductor device composed of a capacitive humidity sensor comprised of a moisture-sensitive polymer layer electrografted to an electrically conductive metal layer situated on an CMOS substrate or a combined MEMS and CMOS substrate, and exposed within an opening through a passivation layer, packages composed of the encapsulated device, and methods of forming the capacitive humidity sensor within the semiconductor device, are provided.
    Type: Application
    Filed: February 25, 2016
    Publication date: August 31, 2017
    Inventors: Qing Zhang, Mohommad Choudhuri, Gul Zeb
  • Method of integrating a copper plating process in a through-substrate-via (TSV) on CMOS wafer
    Patent number: 9704784
    Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: July 11, 2017
    Assignee: NXP USA, Inc.
    Inventors: Matthieu Lagouge, Qing Zhang, Mohommad Choudhuri, Gul Zeb