Patents by Inventor Momoko Shizukuishi
Momoko Shizukuishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8415092Abstract: According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.Type: GrantFiled: October 5, 2010Date of Patent: April 9, 2013Assignee: Tokyo Electron LimitedInventors: Momoko Shizukuishi, Hidetami Yaegashi
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Publication number: 20110027727Abstract: According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.Type: ApplicationFiled: October 5, 2010Publication date: February 3, 2011Applicant: TOKYO ELECTRON LIMITEDInventors: Momoko Shizukuishi, Hidetami Yaegashi
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Patent number: 7846648Abstract: According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.Type: GrantFiled: February 13, 2008Date of Patent: December 7, 2010Assignee: Tokyo Electron LimitedInventors: Momoko Shizukuishi, Hidetami Yaegashi
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Patent number: 7601933Abstract: A heat processing device that bakes a substrate having a resist coating film containing a volatile substance, includes a hot plate 2, a hot plate temperature control unit 3, a box member 1a, 5, 32 that defines a heat space 30 and a fluid space 31, air supply unit 18, 18A and suction unit 10, 10A that create an air current flowing in a horizontal direction in the fluid space 31, and a controller 22, 22A that controls the hot plate temperature control unit 3, the air supply unit 18, 18A, suction unit 10, 10A and the gas temperature control unit 19 so that a relationship of TF<TH?TS?TP is satisfied where TP represents a temperature of the hot plate, TS represents an upper surface temperature of the substrate W, TH represents a temperature of the heat space and TF represents a temperature of the fluid space.Type: GrantFiled: March 26, 2004Date of Patent: October 13, 2009Assignee: Tokyo Electron LimitedInventors: Kousuke Yoshihara, Yuichi Terashita, Momoko Shizukuishi, Atsushi Ookouchi, Hideharu Kyouda
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Publication number: 20080145799Abstract: According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.Type: ApplicationFiled: February 13, 2008Publication date: June 19, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Momoko Shizukuishi, Hidetami Yaegashi
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Patent number: 7384595Abstract: A heat-treating apparatus comprises a table having a heating element buried therein, a plate-like target object to be processed being disposed on the table so as to be heated to a prescribed temperature, a support member for supporting the target object and movable in the vertical direction relative to the table such that the support member is moved to permit the target object supported by the support member to be disposed on the table or is moved away from the table, a cover surrounding the upper portion of the table, and a casing surrounding the lower portion of the table and combined with the cover so as to form a process chamber. When the process chamber is opened, the support member permits the target object to be housed inside the cover.Type: GrantFiled: October 20, 2004Date of Patent: June 10, 2008Assignee: Tokyo Electron LimitedInventors: Kazuhiko Ooshima, Yuichi Terashita, Momoko Shizukuishi, Hideo Shite, Kousuke Yoshihara
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Patent number: 7367710Abstract: According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution. The developing solution is supplied to the substrate by a supply nozzle having a stirrer.Type: GrantFiled: December 14, 2004Date of Patent: May 6, 2008Assignee: Tokyo Electron LimitedInventors: Momoko Shizukuishi, Hidetami Yaegashi
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Publication number: 20060193986Abstract: A heat processing device that bakes a substrate having a resist coating film containing a volatile substance, includes a hot plate 2, a hot plate temperature control unit 3, a box member 1a, 5, 32 that defines a heat space 30 and a fluid space 31, air supply unit 18, 18A and suction unit 10, 10A that create an air current flowing in a horizontal direction in the fluid space 31, and a controller 22, 22A that controls the hot plate temperature control unit 3, the air supply unit 18, 18A, suction unit 10, 10A and the gas temperature control unit 19 so that a relationship of TF<TH?TS?TP is satisfied where TP represents a temperature of the hot plate, TS represents an upper surface temperature of the substrate W, TH represents a temperature of the heat space and TF represents a temperature of the fluid space.Type: ApplicationFiled: March 26, 2004Publication date: August 31, 2006Applicant: Tokyo Electron LimitedInventors: Kousuke Yoshihara, Yuichi Terashita, Momoko Shizukuishi, Atsushi Ookouchi, Hideharu Kyouda
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Publication number: 20050173396Abstract: A heat-treating apparatus comprises a table having a heating element buried therein, a plate-like target object to be processed being disposed on the table so as to be heated to a prescribed temperature, a support member for supporting the target object and movable in the vertical direction relative to the table such that the support member is moved to permit the target object supported by the support member to be disposed on the table or is moved away from the table, a cover surrounding the upper portion of the table, and a casing surrounding the lower portion of the table and combined with the cover so as to form a process chamber. When the process chamber is opened, the support member permits the target object to be housed inside the cover.Type: ApplicationFiled: October 20, 2004Publication date: August 11, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuhiko Ooshima, Yuichi Terashita, Momoko Shizukuishi, Hideo Shite, Kousuke Yoshihara
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Publication number: 20050147930Abstract: According to the present invention, an anti-reflective film formed under a resist film is removed in a photolithography process of a wafer without affecting the resist film. According to the present invention, in a photolithography process of a substrate, an anti-reflective film having solubility in the developing solution is formed and thereafter a resist film is formed. In development treatment after exposure processing, a developing solution is supplied to the substrate to develop the resist film. At an instant when the development of the resist film is finished, a second developing solution lower in concentration than the developing solution is supplied to the substrate. Only the anti-reflective film is dissolved and removed by the supply of the second developing solution.Type: ApplicationFiled: December 14, 2004Publication date: July 7, 2005Inventors: Momoko Shizukuishi, Hidetami Yaegashi