Abstract: The present invention discloses an electrode wiring material including at least one main element selected from the group consisting of Mo and W and an additional element selected from the group consisting of Kr and Xe in an amount of 0.0003 atomic % to 3 atomic %. The present invention further discloses an electrode wiring substrate including an electrode wiring formed on a glass substrate, wherein the electrode wiring is formed of at least one metal selected from the group consisting of Mo and W and the lattice constant of the electrode wiring material is almost equal to the lattice constant of the electrode wiring material in a bulk state.

Abstract: Semiconductor device in which a semiconductor chip is fixed to a lead frame by Sn-Cu alloy solder with a first metal layer interposed between the chip and the solder. The first metal layer is formed at a thickness ranging from 2000 .ANG. to 3 .mu.m, and made of a metal selected from Ti, Cr, V, Zr, Nb and an alloy containing at least one of these metals. A second metal layer made of Ni, Co or an alloy containing at least one of these metals may be interposed at a thickness smaller than that of the first metal between the first metal layer and the solder.