Patents by Inventor Mon-Nan How

Mon-Nan How has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fin field effect transistor and method for fabricating the same
    Patent number: 9553191
    Abstract: A method of fabricating a FinFET includes at last the following steps. A semiconductor substrate is patterned to form a plurality of trenches in the semiconductor substrate and at least one semiconductor fin between the trenches. Insulators are formed in the trenches. A gate stack is formed over portions of the semiconductor fin and over portions of the insulators. A strained material doped with a conductive dopant is formed over portions of the semiconductor fin revealed by the gate stack, and the strained material is formed by selectively growing a bulk layer with a gradient doping concentration.
    Type: Grant
    Filed: November 16, 2015
    Date of Patent: January 24, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-I Liao, Mon-Nan How, Shih-Chieh Chang, Ying-Min Chou, Ting-Chang Chang