Patents by Inventor Mon Pyo HONG

Mon Pyo HONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • VERTICAL-STRUCTURE FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
    Publication number: 20230042988
    Abstract: A vertical-structure field-effect transistor comprises: a gate electrode, which is formed on a substrate and has a horizontal plane extending in the planar direction and a vertical plane extending in the height direction; a gate insulating layer for covering the gate electrode; a vertical channel which is formed on the gate insulating layer and has a channel formed in the height direction; a source electrode formed to make contact with one end of the vertical channel; and a drain electrode formed to make contact with the other end of the vertical channel and formed at a height level different from that of the source electrode, wherein channel on/off of the vertical channel is controlled by means of an electric field formed from the vertical plane of the gate electrode to the vertical channel, and the source electrode and/or the drain electrode can be non-overlapping on the gate electrode in the height direction of the gate electrode.
    Type: Application
    Filed: October 12, 2022
    Publication date: February 9, 2023
    Applicant: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SEJONG CAMPUS
    Inventors: Mon Pyo HONG, Min Ki RYU