Patents by Inventor Mon-Song Liang

Mon-Song Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process to make high-k transistor dielectrics
    Patent number: 7087480
    Abstract: A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is annealed to reduce the impurities within the high-k dielectric layer.
    Type: Grant
    Filed: April 18, 2002
    Date of Patent: August 8, 2006
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Liang-Gi Yao, Ming-Fang Wang, Shih-Chang Chen, Mon-Song Liang