Abstract: A photodiode structure including a silicon substrate, an oxide layer on the silicon substrate, a silicon on insulator region on the oxide layer, a germanium absorption region, a silicon nitride waveguide, a cathode region, and an anode region is provided. The germanium absorption region is at least partially disposed in a recess of the silicon on insulator region. The germanium absorption region includes a top surface having a first width and a bottom surface having a second width, the first width being greater than the second width. The cathode region is formed at a first side of the germanium absorption region, and the anode region is formed at a second side of the germanium absorption region that is opposite the first side.

Abstract: A cross-connect switch architecture is described. A cross-connect switch device includes a cross-point switch array, a plurality of photo detectors and a plurality of amplifiers. The cross-point switch array includes a plurality of switches. Each switch is coupled between a respective photo detector and a respective amplifier and is configured to couple the respective photo detector to the respective amplifier when the switch is selected.

Abstract: A cross-connect switch architecture is described. A cross-connect switch device includes a cross-point switch array, a plurality of photo detectors and a plurality of amplifiers. The cross-point switch array includes a plurality of switches. Each switch is coupled between a respective photo detector and a respective amplifier and is configured to couple the respective photo detector to the respective amplifier when the switch is selected.

Abstract: A photodiode structure including a silicon substrate, an oxide layer on the silicon substrate, a silicon on insulator region on the oxide layer, a germanium absorption region, a silicon nitride waveguide, a cathode region, and an anode region is provided. The germanium absorption region is at least partially disposed in a recess of the silicon on insulator region. The germanium absorption region includes a top surface having a first width and a bottom surface having a second width, the first width being greater than the second width. The cathode region is formed at a first side of the germanium absorption region, and the anode region is formed at a second side of the germanium absorption region that is opposite the first side.

Abstract: One embodiment provides a broadband signal source. The broadband signal source includes a number, n, signal paths and a combiner circuitry. Each signal path, i, includes a programmable phase shifter circuitry, an amplifier circuitry and a harmonic generation circuitry. The programmable phase shifter circuitry is configured to phase shift a path input signal by a respective phase angle, ?i. The path input signal corresponds to a source input signal having a fundamental frequency, f, and an input signal bandwidth. The amplifier circuitry is configured to amplify the phase shifted path input signal. The harmonic generation circuitry is configured to generate a path output signal including a plurality of harmonics of the amplified phase shifted path input signal.

Abstract: In an embodiment, there is provided an apparatus. The apparatus includes an analog front end for biosignal acquisition. The analog front end includes an instrumentation amplifier and a reconfigurable filter. The instrumentation amplifier is configured to receive a biosignal and includes a super class-AB output stage. The reconfigurable filter is coupled to an output of the instrumentation amplifier. The reconfigurable filter has a selectable gain and an adjustable bandwidth. The bandwidth is adjusted based, at least in part, on a duty cycle of a clock signal.

Abstract: A millimeter wave (MMW) circuitry includes a phase modulation circuitry, a plurality of amplifier multiplier chain circuitries and a power combiner circuitry. The phase modulation circuitry is configured to receive input data and a plurality of divided input signals and to provide as output a plurality of phase modulation circuitry output signals. Each phase modulation circuitry output signal corresponds to a respective divided input signal. At least one phase modulation circuitry output signal has a nonzero phase relative to the divided input signals that is related to the input data. Each amplifier multiplier chain circuitry is configured to amplify and frequency multiply and phase multiply the respective phase modulation circuitry output signal to yield a respective power combiner input signal. The power combiner circuitry is configured to sum a plurality of power combiner input signals to yield an output signal. A modulation of the output signal is related to the input data.

Abstract: One embodiment provides a broadband signal source. The broadband signal source includes a number, n, signal paths and a combiner circuitry. Each signal path, i, includes a programmable phase shifter circuitry, an amplifier circuitry and a harmonic generation circuitry. The programmable phase shifter circuitry is configured to phase shift a path input signal by a respective phase angle, ?i. The path input signal corresponds to a source input signal having a fundamental frequency, f, and an input signal bandwidth. The amplifier circuitry is configured to amplify the phase shifted path input signal. The harmonic generation circuitry is configured to generate a path output signal including a plurality of harmonics of the amplified phase shifted path input signal.

Abstract: One embodiment provides an offset calibration circuitry configured to compensate an offset voltage of a resistive bridge sensor. The offset calibration circuitry includes a first current digital to analog converter (IDAC) coupled to a first successive approximation register (SAR), a second IDAC coupled to a second SAR and an SAR controller circuitry. The first IDAC is configured to couple to a negative voltage port of a resistive bridge sensor. The first SAR is configured to store a circuitry first digital value. The second IDAC is configured to couple to a positive voltage port of the resistive bridge sensor. The second SAR is configured to store a second digital value. The SAR controller circuitry is configured to adjust each bit of the first SAR and each bit of the second SAR based, at least in part, on an output of a comparator. The comparator is configured to compare a voltage on the negative voltage port or a voltage on the positive voltage port to a common mode voltage.

Abstract: A millimeter wave (MMW) circuitry includes a phase modulation circuitry, a plurality of amplifier multiplier chain circuitries and a power combiner circuitry. The phase modulation circuitry is configured to receive input data and a plurality of divided input signals and to provide as output a plurality of phase modulation circuitry output signals. Each phase modulation circuitry output signal corresponds to a respective divided input signal. At least one phase modulation circuitry output signal has a nonzero phase relative to the divided input signals that is related to the input data. Each amplifier multiplier chain circuitry is configured to amplify and frequency multiply and phase multiply the respective phase modulation circuitry output signal to yield a respective power combiner input signal. The power combiner circuitry is configured to sum a plurality of power combiner input signals to yield an output signal. A modulation of the output signal is related to the input data.

Abstract: A MEMS device and a method of forming the same. A disclosed method includes: providing a silicon substrate layer, a buried oxide layer and a device silicon layer; using a microfabrication process to pattern a set of device features on the device silicon layer including a shuttle mass and an anchor frame; removing the silicon substrate layer and buried oxide below the shuttle mass; placing a shadow mask on a surface of the device silicon layer, wherein the shadow mask has a microscale opening to expose at least one device feature; and forming a nanoscale stopper on a sidewall of the at least one device feature by depositing a deposition material through the opening in a controlled manner.

Abstract: A cross-connect switch architecture is described. A cross-connect switch device includes a cross-point switch array, a plurality of photo detectors and a plurality of amplifiers. The cross-point switch array includes a plurality of switches. Each switch is coupled between a respective photo detector and a respective amplifier and is configured to couple the respective photo detector to the respective amplifier when the switch is selected.

Abstract: A MEMS device and a method of forming the same. A disclosed method includes: providing a silicon substrate layer, a buried oxide layer and a device silicon layer; using a microfabrication process to pattern a set of device features on the device silicon layer including a shuttle mass and an anchor frame; removing the silicon substrate layer and buried oxide below the shuttle mass; placing a shadow mask on a surface of the device silicon layer, wherein the shadow mask has an microscale opening to expose at least one device feature; and forming a nanoscale stopper on a sidewall of the at least one device feature by depositing a deposition material through the opening in a controlled manner.

Abstract: A MEMS device and a method of forming the same. A disclosed method includes: providing a silicon substrate layer, a buried oxide layer and a device silicon layer; using a microfabrication process to pattern a set of device features on the device silicon layer including a shuttle mass and an anchor frame; removing the silicon substrate layer and buried oxide below the shuttle mass; placing a shadow mask on a surface of the device silicon layer, wherein the shadow mask has an microscale opening to expose at least one device feature; and forming a nanoscale stopper on a sidewall of the at least one device feature by depositing a deposition material through the opening in a controlled manner.