Patents by Inventor Mona Zaghloul
Mona Zaghloul has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11211913Abstract: A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO2/ZnO islands, each including a SiO2 buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO2 buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO2/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.Type: GrantFiled: July 15, 2020Date of Patent: December 28, 2021Assignee: The George Washington UniversityInventors: Boqun Dong, Mona Zaghloul
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Publication number: 20210267545Abstract: An electrocardiogram (ECG) sensor has a flexible thin ring-shaped substrate configured to be worn about a patient's finger. The substrate has an inner surface and an outer surface opposite the inner surface. A first ECG electrode is positioned at the outer surface of said substrate and a second ECG electrode is positioned at the inner (or outer) surface of the said substrate in contact with the finger (or the adjacent finger if the electrode is on the outer surface), whereby the two ECG electrodes receives a single-lead. ECG signal when the first electrode is touched to the patient's body. Touching different locations on the body or wearing multiple rings can provide multi-lead ECG measurements. The ring shape can be converted to a wearable patch for continuous ECG measurements.Type: ApplicationFiled: May 21, 2021Publication date: September 2, 2021Inventors: Zhenyu LI, Quan Dong, Mona Zaghloul
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Patent number: 11035792Abstract: A nanohole array (NHA)-based plasmonic sensor (e.g., gas/condensed phase sensor), their preparation, and their use to detect and analyze samples, especially mixtures of chemicals/bio-chemicals.Type: GrantFiled: March 6, 2019Date of Patent: June 15, 2021Assignees: The George Washington University, GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE, NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGYInventors: Yangyang Zhao, Mona Zaghloul, Stephen Semancik, Kurt D. Benkstein
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Patent number: 11013462Abstract: An electrocardiogram (ECG) sensor has a flexible thin ring-shaped substrate configured to be worn about a patient's finger. The substrate has an inner surface and an outer surface opposite the inner surface. A first ECG electrode is positioned at the outer surface of said substrate and a second ECG electrode is positioned at the inner (or outer) surface of the said substrate in contact with the finger (or the adjacent finger if the electrode is on the outer surface), whereby the two ECG electrodes receives a single-lead ECG signal when the first electrode is touched to the patient's body. Touching different locations on the body or wearing multiple rings can provide multi-lead ECG measurements. The ring shape can be converted to a wearable patch for continuous ECG measurements.Type: GrantFiled: February 18, 2016Date of Patent: May 25, 2021Assignee: The George Washington UniversityInventors: Zhenyu Li, Quan Dong, Mona Zaghloul
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Publication number: 20210021254Abstract: A device employing the generation and enhancement of surface acoustic waves on a highly doped p-type III-V semiconductor substrate (e.g., GaAs, GaSb, InAs, or InGaAs). The device includes two SiO2/ZnO islands, each including a SiO2 buffer layer deposited on the doped p-type III-V semiconductor substrate and a ZnO layer deposited on the SiO2 buffer layer. An input interdigital transducers (IDT) and an output IDT are each patterned on one of the SiO2/ZnO islands. The IDTs generates surface acoustic waves along an exposed surface of the highly doped p-type III-V semiconductor substrate. The surface acoustic waves improve the photoelectric and photovoltaic properties of the device. The device is manufactured using a disclosed technique for propagating strong surface acoustic waves on weak piezoelectric materials. Also disclosed is a photodetector developed using that technique.Type: ApplicationFiled: July 15, 2020Publication date: January 21, 2021Inventors: Boqun Dong, Mona Zaghloul
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Publication number: 20190277762Abstract: A nanohole array (NHA)-based plasmonic sensor (e.g., gas/condensed phase sensor), their preparation, and their use to detect and analyze samples, especially mixtures of chemicals/bio-chemicals.Type: ApplicationFiled: March 6, 2019Publication date: September 12, 2019Inventors: Yangyang Zhao, Mona Zaghloul, Stephen Semancik, Kurt D. Benkstein
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Publication number: 20180020977Abstract: An electrocardiogram (ECG) sensor has a flexible thin ring-shaped substrate configured to be worn about a patient's finger. The substrate has an inner surface and an outer surface opposite the inner surface. A first ECG electrode is positioned at the outer surface of said substrate and a second ECG electrode is positioned at the inner (or outer) surface of the said substrate in contact with the finger (or the adjacent finger if the electrode is on the outer surface), whereby the two ECG electrodes receives a single-lead ECG signal when the first electrode is touched to the patient's body. Touching different locations on the body or wearing multiple rings can provide multi-lead ECG measurements. The ring shape can be converted to a wearable patch for continuous ECG measurements.Type: ApplicationFiled: February 18, 2016Publication date: January 25, 2018Inventors: Zhenyu Li, Quan Dong, Mona Zaghloul
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Patent number: 8791759Abstract: An amplifier for an integrated circuit has a plurality of ratioed current mirrors connected to each other in a stacked configuration. Each ratio mirror has at least two resistors and at least two bipolar transistors connected to each other via said at least two resistors. Each amplifying transistor, contains a capacitor, and potentially and inductor, to internally match the transistors that make up the amplifying stack. DC, harmonic and s-parameter simulations are performed to provide an optimal impedance for each of the stacked transistors to maximize the RF power output of each stacked layer and the amplifier.Type: GrantFiled: March 22, 2012Date of Patent: July 29, 2014Assignees: The United States of America as Represented by the Secretary of the Army, The George Washington UniversityInventors: Ali Darwish, Thomas J. Farm, Mona Zaghloul
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Publication number: 20130015766Abstract: Systems and methods for formation of an ultra high frequency atmospheric pressure plasma jet are presented. A magnetic loop has first and second ends and a gap for generating the plasmas. An inner arc provides RF power to the magnetic loop. Use of the described structure allows for generation of plasmas in air and in inert gases such as argon and helium. Various properties, including the non-thermal nature and shape of the plasma jet are discussed. Applications for utilizing the non-thermal plasma jet are provided.Type: ApplicationFiled: May 11, 2012Publication date: January 17, 2013Applicant: The George Washington UniversityInventors: Mazdak TAGHIOSKOUI, Mona ZAGHLOUL
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Publication number: 20120242410Abstract: An amplifier for an integrated circuit has a plurality of ratioed current mirrors connected to each other in a stacked configuration. Each ratio mirror has at least two resistors and at least two bipolar transistors connected to each other via said at least two resistors. Each amplifying transistor, contains a capacitor, and potentially and inductor, to internally match the transistors that make up the amplifying stack. DC, harmonic and s-parameter simulations are performed to provide an optimal impedance for each of the stacked transistors to maximize the RF power output of each stacked layer and the amplifier.Type: ApplicationFiled: March 22, 2012Publication date: September 27, 2012Inventors: Ali DARWISH, Thomas J. FARM, Mona ZAGHLOUL
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Patent number: 8143681Abstract: The design, fabrication, post-processing and characterization of a novel SAW (Surface Acoustic Wave) based bio/chemical sensor in CMOS technology is introduced. The sensors are designed in AMI 1.5 ?m 2 metal, 2 poly process. A unique maskless post processing sequence is designed and completed. The three post-processing steps are fully compatible with any CMOS technology. This allows any signal control/processing circuitry to be easily integrated on the same chip. ZnO is used as the piezoelectric material for the SAW generation. A thorough characterization and patterning optimization of the sputtered ZnO was carried out. The major novelties that are introduced in the SAW delay line features are: The embedded heater elements for temperature control, compensation and acoustic absorbers that are designed to eliminate edge reflections and minimize triple transit interference. Both of these attributes are designed by using the CMOS layers without disturbing the SAW performance.Type: GrantFiled: April 20, 2007Date of Patent: March 27, 2012Assignee: The George Washington UniversityInventors: Mona Zaghloul, Onur Tigli, Anis Nurashikin Nordin
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Patent number: 8018010Abstract: The design, fabrication, post-processing and characterization of a novel circular design SAW (Surface Acoustic Wave) based bio/chemical sensor in CMOS technology is introduced. The sensors are designed in AMI 1.5 ?m 2 metal, 2 poly process. A unique maskless post processing sequence is designed and completed. The three post-processing steps are fully compatible with any CMOS technology. This allows any signal control/processing circuitry to be easily integrated on the same chip. ZnO is used as the piezoelectric material for the SAW generation. A thorough characterization and patterning optimization of the sputtered ZnO was carried out. The major novelties that are introduced in the SAW delay line features are: The embedded heater elements for temperature control, compensation and acoustic absorbers that are designed to eliminate edge reflections and minimize triple transit interference. Both of these attributes are designed by using the CMOS layers without disturbing the SAW performance.Type: GrantFiled: July 2, 2008Date of Patent: September 13, 2011Assignee: The George Washington UniversityInventors: Onur Tigli, Mona Zaghloul
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Publication number: 20110063068Abstract: A radio frequency (RF) micro electromechanical system (MEMS) switch formed on a substrate (e.g., a CMOS substrate). The RF MEMS switch includes a micromechanical member including a flexible switch membrane configured to move between an on state and an off state of the RF MEMS switch. The flexible switch membrane includes a first set of fingers on a sidewall thereof to be vertically coupled with a second set of fingers formed at an output of the RF MEMS switch on the substrate, and an actuation member in operable communication with the micromechanical member and configured to thermally actuate the micromechanical member such that the first set of fingers electrically couple with the second set of fingers upon thermal actuation of the micromechanical member to enable transmission of an RF signal.Type: ApplicationFiled: June 30, 2010Publication date: March 17, 2011Applicant: THE GEORGE WASHINGTON UNIVERSITYInventors: Shumin Zhang, Mona Zaghloul, Wansheng Su, Anis Nurashikin Nordin
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Publication number: 20100007444Abstract: An improved SAW resonator fabricated using RF-CMOS technology is disclosed. The SAW resonator is capable of a resonant frequency of from about 1 GHz to about 3.12 GHz. Several different embodiments namely both single and double port resonators implemented in standard CMOS (0.6 ?m) and RF-CMOS (0.18 ?m) technologies are presented.Type: ApplicationFiled: March 17, 2009Publication date: January 14, 2010Inventors: Anis Nurashikin Nordin, Mona Zaghloul
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Publication number: 20090124513Abstract: This invention relates to CMOS SAW-based biosensor devices for detecting analytes and biomolecules of interest.Type: ApplicationFiled: July 2, 2008Publication date: May 14, 2009Inventors: Patricia Berg, Mona Zaghloul, Onur Tigli
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Publication number: 20090114798Abstract: The design, fabrication, post-processing and characterization of a novel circular design SAW (Surface Acoustic Wave) based bio/chemical sensor in CMOS technology is introduced. The sensors are designed in AMI 1.5 ?m 2 metal, 2 poly process. A unique maskless post processing sequence is designed and completed. The three post-processing steps are fully compatible with any CMOS technology. This allows any signal control/processing circuitry to be easily integrated on the same chip. ZnO is used as the piezoelectric material for the SAW generation. A thorough characterization and patterning optimization of the sputtered ZnO was carried out. The major novelties that are introduced in the SAW delay line features are: The embedded heater elements for temperature control, compensation and acoustic absorbers that are designed to eliminate edge reflections and minimize triple transit interference. Both of these attributes are designed by using the CMOS layers without disturbing the SAW performance.Type: ApplicationFiled: July 2, 2008Publication date: May 7, 2009Inventors: Onur Tigli, Mona Zaghloul
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Publication number: 20080230859Abstract: The design, fabrication, post-processing and characterization of a novel SAW (Surface Acoustic Wave) based bio/chemical sensor in CMOS technology is introduced. The sensors are designed in AMI 1.5 ?m 2 metal, 2 poly process. A unique maskless post processing sequence is designed and completed. The three post-processing steps are fully compatible with any CMOS technology. This allows any signal control/processing circuitry to be easily integrated on the same chip. ZnO is used as the piezoelectric material for the SAW generation. A thorough characterization and patterning optimization of the sputtered ZnO was carried out. The major novelties that are introduced in the SAW delay line features are: The embedded heater elements for temperature control, compensation and acoustic absorbers that are designed to eliminate edge reflections and minimize triple transit interference. Both of these attributes are designed by using the CMOS layers without disturbing the SAW performance.Type: ApplicationFiled: April 20, 2007Publication date: September 25, 2008Inventors: MONA ZAGHLOUL, Onur Tigli