Patents by Inventor Mong-Chi Hung

Mong-Chi Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming an HDP CVD oxide layer over a metal line structure for high aspect ratio design rule
    Patent number: 6566263
    Abstract: A method of forming an HDP CVD oxide layer over a metal line structure, comprising the following steps. A semiconductor structure having metal lines formed thereon to form a metal line structure is provided. The metal lines having exposed sidewalls. The metal line structure is treated with N2O to form a layer of Al2O3 on each of the metal line exposed sidewalls to form a N2O treated metal line structure. An HDP CVD oxide layer is formed over the N2O treated metal line structure to form a resulting metal line structure. Whereby the resulting metal line structure is free of metal voids.
    Type: Grant
    Filed: August 2, 2000
    Date of Patent: May 20, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Mong-Chi Hung, Ming-Tsong Wang, Teh-Wei Ger
  • SABPSG process real temperature monitor
    Patent number: 6541399
    Abstract: A new method is provided of measuring actual temperatures across the surface of a semiconductor wafer. The thickness of a layer of Sub-Atmospheric TEOS Undoped Silicon Glass (SAUSG) is used to monitor the temperature distribution across the surface of a silicon substrate.
    Type: Grant
    Filed: October 1, 2001
    Date of Patent: April 1, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Mong-Chi Hung, Pin-Huan Wu, Cheng-Lung Yang