Abstract: A lighting system including a LED light source, a convex lens, and a light guide post disposed between the LED light source and the convex lens. The light guide post includes a light emitting portion and a light collecting portion connected to the light emitting portion. The light emitting portion has a light guide post-light emitting surface facing the convex lens. The light collecting portion has an internal reflective surface including at least an elliptical surface having a first focal point and a second focal point. The second focal point is located between the first focal point and the convex lens, and the second focal point is located inside the light guide post.

Abstract: A vehicle lamp includes a heat-dissipation base, a light source mounted on the heat-dissipation base, a lightguide having a light incident surface for receiving light from the light source, a light outgoing surface for projecting a portion of light received from the light source, opposite upper and bottom surfaces disposed between the light incident and light outgoing surfaces, and a light-guiding structure formed on the upper surface. The lightguide is configured to guide a portion of a light beam entering the light incident surface to the light outgoing surface, with the light-guiding structure configured to guide another portion of the light beam entering the light incident surface to be outputted through the bottom surface. A condensing lens is further provided to receive light from the light outgoing surface and the bottom surface.

Abstract: A light-guiding pillar used in a vehicle lamp includes a major structure and a light-guiding structure. The major structure has a light incident surface, a light outgoing surface, an upper surface, and a bottom surface. The upper surface and the bottom surface are disposed between the light incident surface and the light outgoing surface, in which the upper surface and the bottom surface are opposite to each other. The major structure is configured to guide a portion of a light beam entering the major structure through the light incident surface to the light caving surface. The light-guiding structure is disposed on the upper surface and configured to guide another portion of the light beam entering the major structure through the light incident surface from the upper surface to the bottom surface with passing through the bottom surface.

Abstract: A lighting system including a LED light source, a convex lens, and a light guide post disposed between the LED light source and the convex lens. The light guide post includes a light emitting portion and a light collecting portion connected to the light emitting portion. The light emitting portion has a light guide post-light emitting surface facing the convex lens. The light collecting portion has an internal reflective surface including at least an elliptical surface having a first focal point and a second focal point. The second focal point is located between the first focal point and the convex lens, and the second focal point is located inside the light guide post.

Abstract: A light-guiding pillar used in a vehicle lamp includes a major structure and a light-guiding structure. The major structure has a light incident surface, a light outgoing surface, an upper surface, and a bottom surface. The upper surface and the bottom surface are disposed between the light incident surface and the light outgoing surface, in which the upper surface and the bottom surface are opposite to each other. The major structure is configured to guide a portion of a light beam entering the major structure through the light incident surface to the light caving surface. The light-guiding structure is disposed on the upper surface and configured to guide another portion of the light beam entering the major structure through the light incident surface from the upper surface to the bottom surface with passing through the bottom surface.

Abstract: A light-guiding pillar used in a vehicle lamp includes a major structure and a light-guiding structure. The major structure has a light incident surface, a light outgoing surface, an upper surface, and a bottom surface. The upper surface and the bottom surface are disposed between the light incident surface and the light outgoing surface, in which the upper surface and the bottom surface are opposite to each other. The major structure is configured to guide a portion of a light beam entering the major structure through the light incident surface to the light outgoing surface. The light-guiding structure is disposed on the upper surface and configured to guide another portion of the light beam entering the major structure through the light incident surface from the upper surface to the bottom surface with passing through the bottom surface.

Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.

Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.

Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.

Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

Abstract: A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integers and N?1, M?2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.

Abstract: A semiconductor light emitting structure including a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The patterned structure is protruded from or indented into a surface of the substrate, so that the surface of the substrate becomes a roughed surface. The patterned structure has an asymmetrical geometric shape. The first semiconductor layer is disposed on the roughed surface. The active layer is disposed on the first semiconductor layer. The second semiconductor is disposed on the active layer.

Abstract: An LED with undercut includes a first semiconductor layer, an illumination layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer includes a first area and a second area. A first acute angle is included between a first slanted wall and a first top surface of the first area. The illuminating layer is formed on the second area. The second semiconductor is formed on the illuminating layer. The first and second electrodes are respectively formed on the first top surface and the second semiconductor layer. The first semiconductor layer on the second area, the illuminating layer and the second semiconductor layer on the first semiconductor layer form a MESA structure. The MESA structure includes a second slanted wall adjacent to the first area. A second acute angle is included between the second slanted wall and the first top surface.

Abstract: A light emitting diode includes a substrate, a first-type semiconductor layer, a nanorod layer and a transparent planar layer. The first-type semiconductor layer is disposed over the substrate. The nanorod layer is formed on the first-type semiconductor layer. The nanorod layer includes a plurality of nanorods and each of the nanorods has a quantum well structure and a second-type semiconductor layer. The quantum well structure is in contact with the first-type semiconductor layer, and the second-type semiconductor layer is formed on the quantum well structure. The transparent planar layer is filled between the nanorods. A surface of the second-type semiconductor layer is exposed out of the transparent planar layer.

Abstract: A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integers and N?1, M?2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.

Abstract: A high brightness light-emitting diode free of p-type gallium nitride (GaN) layer is provided, which includes an n-type semiconductor layer, a multi-quantum well (MQW) layer, a p-type indium gallium nitride (InGaN) layer and an indium tin oxide (ITO) layer. The grain size of the ITO layer is ranging from 5 to 1000 angstroms. A method for manufacturing the high brightness light-emitting diode is also provided.

Abstract: Disclosed herein is a light emitting diode, the structure of the light emitting diode comprises a substrate, a first-type semiconductor layer, a structural layer, a light emitting layer, a second-type semiconductor layer, a transparent conductive layer, a first contact pad and a second contact pad in regular turn. The structural layer comprises a stacked structure having a trapezoid sidewall and nano columns extending from the trapezoid sidewall in regular arrangement. Also, a method for fabricating the light emitting diode is disclosed.

Abstract: A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure.